Higher Triplet Excited States of Oligo(<i>p</i>-phenylenevinylene)s

Yosuke Oseki,Mamoru Fujitsuka,Michihiro Hara,Xichen Cai,Akira Sugimoto,Tetsuro Majima

DOI: https://doi.org/10.1021/jp047275b

2004-01-01

Abstract:Properties of the higher excited triplet states (T-n) of oligo(p-phenylenevinylene)s (OPVn, n denotes the number of phenyl rings, n = 3, 4) were investigated with use of the ns-ps and ns-ns two-color two-laser flash photolysis techniques. The lowest triplet excited states of OPVn were generated through the triplet energy transfer (ENT) process by the first 355-nm laser irradiation to the triplet sensitizer. With the delay time of 4mus after the first laser irradiation, OPVn(T-1) was selectively excited with the second 532-nm laser. Bleaching of the absorption of OPVn(T-1) was observed during the second ps laser irradiation, indicating the generation of OPVn(T-n). The bleaching completely recovered at a few tens of picoseconds after the second picosecond laser irradiation, because of the internal conversion from OPVn(T-n) to OPVn(T-1). The lifetimes of T-n were estimated to be 35 and 30 ps for OPV3 and OPV4, respectively. In the presence of the triplet energy acceptor (Q), the quenching and recovery of the T-1-absorption bands of OPVn were observed because of ENT from OPVn(T-n) to Q and Q(T-1) to OPVn, respectively. On the basis of the ENT from OPVn(T-n) to a series of Q, the T-2-T-1 energy gaps of OPV3 and OPV4 were estimated to be 1.3 and 1.1 eV, respectively.