Halogen-induced polymorphic Bi<sub>2</sub>WO<sub>6-<i>x</i></sub>halogen<sub>2<i>x</i></sub> with highly photocatalytic performance and mechanism investigation
Wenliang Liu,Kai Qi,Yan Wang,Fushan Wen,Jiqian Wang
DOI: https://doi.org/10.1016/j.apsusc.2022.154160
IF: 6.7
2022-01-01
Applied Surface Science
Abstract:Element doping is an effective technique to modulate bandgap and improve activity of catalysts. The halogen elements (F, Cl, Br and I) doped Bi2WO6 (F-BWO, Cl-BWO, Br-BWO and I-BWO) were successfully prepared through a simple one-step microwave-assisted solvothermal strategy. The effects of F, Cl, Br and I doping on the crystal structure, morphology, photoelectric and physicochemical properties of the as-prepared samples have been investigated by XRD, SEM, FT-IR, XPS, BET, DRS, PL, EIS, and Tafel. The photocatalytic activity of all the doped samples were improved to varying degrees. Among them, the I-BWO showed the best photocatalytic hydrogen (H-2) production (82.53 mu mol g(-1)h(-1)) and rhodamine B (RhB) photodegradation (99%, 40 min) activities. According to the DFT (density functional theory) calculation, the bandgap regulation effect of halogen on the as-fabricated samples has been confirmed, and the photocatalytic mechanism of the doped catalysts has been discussed. This work systematically discussed the morphology-inducting effect of halogen on Bi2WO6, providing a one-step strategy for designing highly active photocatalysts.