Abstract:Synthesis of device-quality GeSn materials with higher Sn compositions is hindered by various factors, such as Sn segregation, clustering, and short-range ordering effects. In the present work, the impact of the clustering of Sn atoms in a GeSn semiconductor alloy was studied by density functional theory using SG15 pseudopotentials in a Synopsys QuantumATK tool, where the thermodynamic stability, effective band structure, indirect and direct bandgaps, and density of states (DOS) were computed to highlight the difference between a cluster-free random GeSn alloy and a GeSn alloy with Sn–Sn clusters. A 54-atom bulk Ge1–xSnx (x = 3.71%–27.77%) supercell was constructed with cluster-free and a first nearest neighbor Sn–Sn clustered GeSn alloy at each composition for this work. Computation using the generalized gradient approximation exchange-correlation functional showed that the thermodynamic stability of GeSn was reduced due to the clustering of Sn, which increased the formation energy of the GeSn alloys by increasing the Hartree potential energy and exchange-correlation energy. Moreover, with the effective band structure of the GeSn material at a Sn composition of ∼22%, both direct (Eg,Γ) and indirect (Eg,L) bandgaps decreased by a large margin of 40.76 and 120.17 meV, respectively, due to Sn–Sn clustering. On the other hand, Eg,Γ and Eg,L decrease is limited to 0.5 and 12.8 meV, respectively, for Sn composition of ∼5.6%. Similar impacts were observed on DOS, in an independent computation without deducing from the electronic band structure, where the width of the forbidden band reduces due to the clustering of Sn atoms in GeSn. Moreover, using the energy bandgaps of GeSn computed with the assumption of it being a random alloy having well-dispersed Sn atoms needs revision by incorporating clustering to align with the experimentally determined bandgap. This necessitates incorporating the effect of Sn atoms clustered together at varying distributions based on experimental characterization techniques such as atom probe tomography or extended x-ray absorption fine structure to substantiate the energy bandgap of the GeSn alloy at a particular composition with precision. Hence, considering the effect of Sn clusters during material characterization, beginning with the accurate energy bandgap characterization of GeSn would help in mitigating the effect of process variations on the performance characteristics of GeSn-based group IV electronic and photonic devices such as varying leakage currents in transistors and photodiodes as well as the deviation from the targeted wavelength of operation in lasers and photodetectors.

The Growth Behaviors of the Zn-doped Different Sized Germanium Clusters: A Density Functional Investigation

A Theoretical Study on Growth Patterns of Ni-doped Germanium Clusters.

Metal-doped Germanium Clusters MGens at the Sizes of N=12 and 10: Divergence of Growth Patterns from the MSin Clusters

A Computational Investigation of Copper-Doped Germanium and Germanium Clusters by the Density-Functional Theory

Structure And Electronic Properties Of Ge-N (N=2-25) Clusters From Density-Functional Theory

Structure and Electronic Properties Ofgen(n=2–25)

Investigation of A Size-Selective Single Hafnium-Encapsulated Germanium Cage

Role of tin clustering in band structure and thermodynamic stability of GeSn by atomistic modeling

Structural Growth Sequences and Electronic Properties of Manganese-Doped Germanium Clusters: MnGen(2–15)

Thermochemical Properties and Growth Mechanism of the Ag-Doped Germanium Clusters, AgGe n λ with n = 1–13 and λ = −1, 0, and +1

Structural Growth Sequences and Electronic Properties of Zinc Oxide Clusters (zno)(n) (N=2-18)

Structures of medium size germanium clusters

THE COMPLEXITY OF THE GROWTH AND OPTICAL PROPERTIES OF GERMANIUM NANOCLUSTERS

Nonmetal-Metal Transition In Zn-N (N=2-20) Clusters

Structural evolution and electronic properties of the La-doped germanium clusters

Geometries, Stabilities, and Vibrational Properties of Bimetallic Mo2-doped Gen (n = 9-15) Clusters: a Density Functional Investigation.

Geometries, Stabilities, and Electronic Properties of Different-Sized ZrSi(n) (N=1-16) Clusters: a Density-Functional Investigation.

Geometries and Magnetisms of the Zr(n) (N=2-8) Clusters: the Density Functional Investigations.

Thermal properties of medium-sized Ge clusters

Dipole Polarizabilities of Germanium Clusters

Enhancing the Electronic and Optical Properties of Germanium Nanoclusters through Alkali Metal Doping: A Case Study on Na2