Abstract:In this study, we aim to further enhance the electroluminescence (EL) performances of trivalent europium complex Eu(TTA)3phen (TTA=thenoyltrifluoroacetone and phen=1,10-phenanthroline) by designing the device structure with stepwise energy levels. The widely used bipolar material 2,6-bis(3-(9H-carbazol-9-yl)phenyl)pyridine (26DCzPPy) was chosen as host material, while the doping concentration of Eu(TTA)3phen was optimized to be 4%. To facilitate the injection and transport of holes, MoO3 anode modification layer and 4,4′,4′′-Tris(carbazole-9-yl)triphenylamine (TcTa) hole transport layer were inserted in sequence. Efficient pure red emission with suppressed efficiency roll-off was obtained attributed to the reduction of accumulation holes, the broadening of recombination zone, and the improved balance of holes and electrons on Eu(TTA)3phen molecules. Finally, the device with 3nm MoO3 and 5nm TcTa obtained the highest brightness of 3278cd/m2, current efficiency of 12.45cd/A, power efficiency of 11.50lm/W, and external quantum efficiency of 6.60%. Such a device design strategy helps to improve the EL performances of emitters with low-lying energy levels and provides a chance to simplify device fabrication processes.

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