Room Temperature Ferromagnetism and Optical Tunability in Cu Doped GaN Nanowires

Wang Peng-Wei,Zhang Xue-Jin,Wang Bai-Qi,Zhang Xin-Zheng,Yu Da-Peng

DOI: https://doi.org/10.1088/0256-307x/25/8/082

2008-01-01

Abstract:GaN nanowires doped with 2 at.% and 6 at.% Cu ions are synthesized by chemical vapour deposition method. Structural and compositional analyses demonstrate that the as- grown nanowires are of single crystal wurtzite GaN structure. Magnetic characterizations reveal that the doped GaN nanowires exhibit room temperature ferromagnetism. The measured saturation magnetic moments are 0.37 mu(B) and 0.47 mu(B) per Cu atom at 300K for Cu 2 at.% and 6 at.%, respectively. The photoluminescence spectra show that Cu dopant can tune the band gap of the GaN, which leads to a red shift of band- edge emission with increasing dopant concentration.