Electronic structure of CdTe and HgTe crystals by a Tight-Binding model

LIAO Yun-Long,ZHAO Ji-Jun
2010-01-01
Journal of Atomic and Molecular Physics
Abstract:Based on local density approximation (LDA or GGA),the present density functional theory (DFT) always tends to underestimate the band gap,which is especially worse for narrow band gap semiconductors. Although the DFT method based on hybrid functionals can effectively amend this deficiency, it is too expensive to be applied to the large systems.In this paper,we have developed a set of tight-binding parameters which can describe the electronic structures of CdTe and HgTe solids accurately.Using the theoretical results of CdTe and HgTe crystals from DFT calculations with hybrid functional as input,we constructed an orthogonal,sp~3s~* orbitals TB model.The TB model can reproduce the dispersion relation of band structures near the Femi level within 4eV for CdTe and HgTe crystals.Moreover, the TB model was used to compute the density of states of CdTe and HgTe amorphous.The results are in good agreement with previous theoretical and experimental results.
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