Analysis of Transverse Mode Formation in Quasi-Three-Level Microchip Lasers

Wupeng Gong,Mali Gong,Qiang Liu,Fuyuan Lu
DOI: https://doi.org/10.1007/s11082-005-3024-0
IF: 3
2005-01-01
Optical and Quantum Electronics
Abstract:The effects of gain guiding and thermal guiding on the cavity mode formation for quasi-three-level microchip lasers are investigated. A parameter describing the dominant guiding mechanisms at the lasing threshold is defined. Paraxial wave propagation equation for the field envelope in the gain medium with thermal-induced refractive index profile and gain profile is derived. A comparison between the calculated results and those of experiments reveals that this model is quite reasonable and applicable not only to the Yb:YAG microchip laser, but also to other quasi-three-level microchip lasers.
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