Abstract:In recent years, various novel phenomena have been observed in two-dimensional semiconductor moiré systems, including the moiré excitons, strongly-correlated electronic states and vertical ferroelectricity. To gain an insight into the underlying physical mechanisms of these intriguing phenomena, it is essential to understand the interlayer coupling form of the electrons in moiré systems. In this work, the position- and momentum-dependent interlayer coupling effects in two-dimensional semiconductor moiré superlattices are investigated. Starting from the monolayer Bloch basis, the interlayer coupling between two Bloch states are treated as a perturbation, and the coupling matrix elements in commensurate and incommensurate bilayer structures are obtained, which are found to depend on the momentum and the interlayer translation between the two layers. Under the effect of an external potential, the Bloch states form localized wavepackets, and their interlayer couplings are found to depend on the wavepacket width as well as the interlayer translation at the wavepacket center position. Meanwhile the momentum-dependence results in very different interlayer coupling forms for the ground-state \begin{document}$ \rm{S} $\end{document} -type and the excited-state \begin{document}$ {\rm{P}}^{\pm } $\end{document} -type wavepackets. It is shown that at a position where the interlayer coupling between two \begin{document}$ \rm{S} $\end{document} -type wavepackets vanishes, the coupling between an \begin{document}$ \rm{S} $\end{document} -type wavepacket and a \begin{document}$ {\rm{P}}^{+} $\end{document} -type wavepacket (or between an \begin{document}$ \rm{S} $\end{document} - type wavepacket and a \begin{document}$ {\rm{P}}^{-} $\end{document} -type wavepacket) reaches a maximum strength. This can be used to manipulate the valley-selective interlayer transport of the ground-state wavepackets through external electric and optical fields. Besides, the vertical ferroelectricity recently discovered in bilayer systems can be attributed to the charge redistribution induced by the coupling between conduction and valence bands in different layers. Using the obtained interlayer coupling form combined with a simplified tight-binding model for the monolayer, the vertical electric dipole density can be calculated whose form and order of magnitude accord with the experimental observations.

Noncollinear Interlayer Coupling Across A Semiconductor Spacer

Noncollinear Interlayer Exchange Coupling Caused By Interface Spin-Orbit Interaction

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Temperature dependence of noncollinear interlayer coupling

Driving noncollinear interlayer exchange coupling intrinsically in magnetic trilayers

Interlayer Exchange Coupling in Semiconductor Magnetic/Nonmagnetic Superlattices

Interlayer-Coupling Energy Of Magnetic Trilayers In A One-Band Tight-Binding Model

Interlayer electronic coupling on demand in a 2D magnetic semiconductor

Antiferromagnetic interlayer exchange coupling across an amorphous metallic spacer layer

Interlayer Exchange Coupling: Effect of Magnetic and Outer Nonmagnetic Films

Interlayer coupling in two-dimensional semiconductor materials

Antiferromagnetic coupling across nonmagnetic transition-metal films alloyed with ferromagnetic elements

Angular Dependence of the Interlayer Exchange Coupling on the Nonmagnetic Cap Layers

The Interlayer Exchange Coupling in Magnetic Multilayers: the Effect of the Thickness of the Ferromagnetic Layer

On the origin of noncollinear magnetization coupling across RuX layers

Interlayer Exchange Coupling in Complex Magnetic Multilayers

Interlayer coupling in EuS/SrS, EuS/PbSe and EuS/PbTe magnetic semiconductor superlatices

Interlayer Exchange Coupling in (Ga,Mn)As-based Superlattices

Electric Field Tuning of Interlayer Coupling in Noncentrosymmetric 3R-MoS 2 with an Electric Double Layer Interface

Optically Probing the Asymmetric Interlayer Coupling in Rhombohedral-Stacked MoS2 Bilayer

Position- and momentum-dependent interlayer couplings in two-dimensional semiconductor moiré superlattices