New hydrogen desorption kinetics from vicinal Si(0 0 1) surfaces observed by reflectance anisotropy spectroscopy

J. Zhang,A.K. Lees,A.G. Taylor,M.H. Xie,B.A. Joyce,Z. Sobiesierksi,D.I. Westwood
DOI: https://doi.org/10.1016/S0022-0248(96)00858-5
IF: 1.8
1997-01-01
Journal of Crystal Growth
Abstract:Reflectance anisotropy (RA) from vicinal Si (0 0 1) surfaces is shown to be strongly influenced by the domain structure on the (2X1) + (1X2) reconstructed surface and by adsorbates such as hydrogen. Utilizing these adsorbate effects by monitoring the time dependence of RA from single domain vicinal surfaces, an accurate determination of surface hydrogen coverage can be made. We report a zeroth order coverage dependence of hydrogen desorption which is attributed to a desorption pathway incorporating a saturated and localised precursor state in which the diffusion/migration of surface hydrogen is not the rate limiting step.
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