Remote epitaxy of single-crystal rhombohedral WS 2 bilayers
Chao Chang,Xiaowen Zhang,Weixuan Li,Quanlin Guo,Zuo Feng,Chen Huang,Yunlong Ren,Yingying Cai,Xu Zhou,Jinhuan Wang,Zhilie Tang,Feng Ding,Wenya Wei,Kaihui Liu,Xiaozhi Xu
DOI: https://doi.org/10.1038/s41467-024-48522-8
IF: 16.6
2024-05-16
Nature Communications
Abstract:Compared to transition metal dichalcogenide (TMD) monolayers, rhombohedral-stacked (R-stacked) TMD bilayers exhibit remarkable electrical performance, enhanced nonlinear optical response, giant piezo-photovoltaic effect and intrinsic interfacial ferroelectricity. However, from a thermodynamics perspective, the formation energies of R-stacked and hexagonal-stacked (H-stacked) TMD bilayers are nearly identical, leading to mixed stacking of both H- and R-stacked bilayers in epitaxial films. Here, we report the remote epitaxy of centimetre-scale single-crystal R-stacked WS 2 bilayer films on sapphire substrates. The bilayer growth is realized by a high flux feeding of the tungsten source at high temperature on substrates. The R-stacked configuration is achieved by the symmetry breaking in a -plane sapphire, where the influence of atomic steps passes through the lower TMD layer and controls the R-stacking of the upper layer. The as-grown R-stacked bilayers show up-to-30-fold enhancements in carrier mobility (34 cm 2 V −1 s −1 ), nearly doubled circular helicity (61%) and interfacial ferroelectricity, in contrast to monolayer films. Our work reveals a growth mechanism to obtain stacking-controlled bilayer TMD single crystals, and promotes large-scale applications of R-stacked TMD.
multidisciplinary sciences