Charge carrier transport in PbS films doped with iodine
Maskaeva Larisa,Andrej Pozdin,Anastasia Pavlova,Yulia Korkh,Tatiana Kuznetsova,Vladimir Voronin,Karina Krivonosova,Tatiana Charikova,Vyacheslav Markov
DOI: https://doi.org/10.1039/d3cp06053e
IF: 3.3
2024-03-12
Physical Chemistry Chemical Physics
Abstract:The results of measurements of electrical and Hall resistivities on polycrystalline PbS films doped with iodine obtained by hydrochemical deposition are presented. The analysis of the temperature dependences of resistivity points out to the crossover from the hopping mechanism due to the thermal delocalization into impurity band to the variable range hopping mechanism. The increase of the iodine content in the films leads to the increase of the impurity ionization energy. It has been established that the temperature dependence of resistivity over a wide temperature range obeys the inverse Arrhenius law, characteristic of disordered polycrystalline films with different size and orientations of crystallites relative to the substrate that was confirmed by AFM topography, Raman spectra and X-ray diffraction measurements. We have found that the type of charge carriers changes from electrons to holes with the increase of the iodine content. Also, for a wide range of iodine doping the concentration of charge carriers is low pointing to the possible occurrence of a self-compensation mechanism due to the formation of impurity defects.
chemistry, physical,physics, atomic, molecular & chemical