Threshold Effect of Incident Light Intensity for the Resistance Against the Photorefractive Light-Induced Scattering in Doped Lithium Niobate Crystals

NY Kamber,JJ Xu,SM Mikha,GQ Zhang,SM Liu,GY Zhang
DOI: https://doi.org/10.1016/s0030-4018(00)00523-x
IF: 2.4
2000-01-01
Optics Communications
Abstract:In this paper, we have studied experimentally the threshold effect of the incident light intensity for the resistance against the photorefractive light-induced scattering in the samples of doped lithium niobate crystals. The doping the LiNbO3 crystal with a suitable concentration of Fe and damage-resistant dopants will reduce the concentration of Fe ions on the Li sites, which will result in the suppression of the photorefractive light-induced scattering and an increase of the so-called threshold light intensity. We demonstrated the advantage of the double-doped LiNbO3 crystals in photorefractive storage. The SNR (signal-to-noise ratio) and the resolution of the holographic reconstructed patterns in these kinds of crystals are very high. It is simple and convenient to practice using double-doped LiNbO3 crystals to suppress the fanning noise.
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