Abstract:Because digital information in semiconductor spintronics is encoded,stored,processed,and transferred by electron spins instead of its charge,the operation of a spintronic device requires that electrons in semiconductors are spin polarized.But spin states of electrons in traditional semiconductor materials are usually degenerate,therefore,conventional semiconductors cannot are directly exploited to design spintronic devices.Thus,how to spin polarized electrons in ordinary semiconductors (also called spin injection) including its effective manipulation has become an important direction of research.In physics,either Zeeman effect between electron spins and external magnetic fields or spin-orbit coupling of electron spins and its spatial momentums can be employed to achieve electron-spin polarization.According to these physical mechanisms,some effective schemes have been developed successfully,such as spin filtering,temporally separating electron-spins,spatial separations of electron spins,and so on.Utilizing theoretical analysis combined with numerical calculation,transmission time is investigated by considering both Zeeman effect as well as Rashba and Dresselhaus spin-orbit couplings for electron in magnetically confined semiconductor nanostructure,which is constructed on the GaAs/Al x Ga 1-x As heterostructure.Schrödinger equation of an electron is numerically solved by matrix diagonalization and improved transfer-matrix method.Adopting H.G.Winful's theory,dwell time of electron is calculated and spin polarization ratio is given.Due to Zeeman effect and spin-orbit coupling,dwell time of electron is obviously associated with the spins,which is used to separate electron-spins in time dimension and to realize spin polarization of electrons in semiconductors.Because the semiconductor GaAs has a small effective g-factor,electron-spin polarization originates mainly from spin-orbit coupling including Rashba and Dresselhaus types,which is circa 4 times larger than that induced by Zeeman effect.Dwell time of electron and its spin polarization can be efficaciously modified by interfacial confining electric-field or strain engineering,as the effective potential of electron is related to spin-orbit coupling's strength.These interesting findings not only have some references for spin injection into semiconductors,but also provide a controllable temporal electron-spin splitter for semiconductor spintronics device applications.

A spin polarized device constructed with spin–orbit coupled semiconductors

Spontaneous Spin-Polarized Current in a Nonuniform Rashba Interaction System

Spin polarization created by spin-orbit coupling for electrons in a hybrid magnetic-electric-barrier semiconductor microstructure

Switching of Current Spin Polarization by Electron-Phonon Interaction in a Quantum Dot Device

Spin-orbit-coupling induced electron-spin polarization in magnetically and electrically confined semiconductor microstructure

Transmission time and spin polarization for electron in magnetically confined semiconducotr nanostructure modulated by spin-orbit coupling

Generation Of Spin Polarization In Two-Terminal Electron Waveguides By Spin-Orbit Interaction And Magnetic Field Modulations

Spin-Polarized Currents in Double Quantum Dots with Rashba Spin-Orbit Interactions

Spin Polarization and Transport in a Spin‐Orbit Coupled System (Abstract)

Spin photocurrent and current-induced spin polarization ——New progress in semiconductor spintronics

Rashba Spin-Orbit Interaction Induced Spin-Polarized Andreev-reflection Current Through a Double Aharonov–Bohm Interferometer

Bias-Controllable Intrinsic Spin Polarization In A Quantum Dot: Proposed Scheme Based On Spin-Orbit Interaction

Spin Current Diode Based on an Electron Waveguide with Spin-Orbit Interaction

Spin-orbit Coupling and Spin Current in Mesoscopic Devices

Dresselhaus spin-orbit coupling induced electron-spin polarization in a 3-layered semiconductor heterostructure

Charge and Spin Currents in A Three-Terminal Mesoscopic Ring

Pure Spin Current in A Three-Terminal Spin Device in the Presence of Rashba Spin-Orbit Interaction

Highly Efficient Electric-Field Control of Giant Rashba Spin-Orbit Coupling in Lattice-Matched InSb/CdTe Heterostructures.

Spin-polarized transport through an Aharonov-Bohm interferometer embedded with a quantum dot molecule.

Chirality-Induced Magnet-Free Spin Generation in a Semiconductor

Controllable Photonic Spin Hall Effect Induced by an Off-Axis Polarization Singularity