In-Situ Conductivity Measurement of BaF 2 under High Pressure and High Temperature

Ai-Min Hao,Chun-Xiao Gao,Li Ming,Chun-Yuan He,Xiao-Wei Huang,Dong-Mei Zhang,Cui-Ling Yu,Zou Guang Tian,Yan-Chun Li,Xiao-Dong Li,Liu Jing
DOI: https://doi.org/10.1088/0256-307x/23/11/010
2006-01-01
Abstract:We perform the in-situ conductivity measurement on BaF2 at high pressure using a microcircuit fabricated on a diamond anvil cell. The results show that BaF2 initially exhibits the electrical property of an insulator at pressure below 25 GPa, it transforms to a wide energy gap semiconductor at pressure fro 25 to 30 GPa, and the conductivity increases gradually with increasing pressure from 30 GPa. However, the metallization predicted by theoretical calculation at 30-33 GPa cannot be observed. In addition, we measure the temperature dependence of the conductivity at several pressures and obtain the relationship between the energy gap and pressure. Based on the experimental data, it is predicyted that BaF2 would transform to a metal at about 87 GPa and ambient temperature. The conductivity of BaF2 reaches the order of 10(-3)ohm(-1)cm(-1) at 37 GPa and 2400 K, the superionoc conduction is not observed during the experiments, indicating the application of pressure elevates greatly the transition of the superionic conduction.
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