Abstract:We study the electronic structure and transport properties of a network of topological domain walls composed of domains with opposite valley Chern numbers. Although each domain is insulating inside its energy gap, we find gapless Bloch bands exhibiting linear Dirac dispersion near the charge neutrality point. The corresponding Bloch states are distributed around the domain walls that can host electric current. For a unit cell of the network that is composed of three intersecting domain walls, we study the current partition rules, and find that more current injected from one domain wall is partitioned into its neighboring ones and the forward propagating current is less but nonzero. For a network of domain walls, we investigate the edge-dependent electronic transport properties, e.g., in a ribbon with sawtooth domain wall edges, we find that the edge states propagate along the system boundaries for Fermi energies near the charge neutrality point, which contributes to the quantized conductance that is robust against weak disorders. Such a conductance quantization agrees with the recent experiments [Nat. Mater. 18, 453 (2019)]; For the Fermi energies deviating from the charge neutrality point, all domain walls can contribute to host the electrical current. In a ribbon with trident domain wall edges, however, a weak energy gap opens near the charge neutrality point due to the finite size effect. Such a network can be realized in morié pattern systems (e.g., twisted bilayer graphene under a perpendicular electric field). Our results provide a comprehensive depiction of the electronic transport properties of a topological domain wall network and have far-reaching implications in designing electron-beam splitters and low-power-consuming topological quantum devices. ∗Correspondence author: qiao@ustc.edu.cn

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