Resistivity Saturation in Alkali-Doped C-60

JG HOU,L LU,VH CRESPI,XD XIANG,A ZETTL,ML COHEN
DOI: https://doi.org/10.1016/0038-1098(94)00915-5
IF: 1.934
1995-01-01
Solid State Communications
Abstract:The high-temperature resisitivity of K and Rb-doped C-60 single crystals was measured with pulsed heating techniques and analyzed within the parallel-resistor extension to Bloch-Boltzmann transport theory. Rb3C60 exhibits resitivity saturation with p(sat)(Rb) approximate to 6 +/- 3m Omega-cm, corresponding to a saturation mean free path of l(sat)(Rb) approximate to 1 +/- 0.5 Angstrom. In contrast K3C60 does not show signs of resistivity saturation up to 800 K, suggesting that p(sat)(K) > 3m Omega-cm and l(sat)(K) < 1.5 Angstrom. The electronic stakes at high temperature have a characteristic length scale significantly smaller than the fcc lattice constant.
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