Interfacial engineering strategy and controlled growth of MoSe 2 @ZnO composite material and its light-matter coupling

Yu Liu,Cheng-Bao Yao,Hong-Yu Li,Hong-Xu Cao,Xin-Yu Zheng,Bing-Yin Shi,Wen-Jun Sun,Xiao-Jie Liu
DOI: https://doi.org/10.1016/j.matchemphys.2023.127714
IF: 4.778
2023-04-05
Materials Chemistry and Physics
Abstract:The combination of metal oxides and two-dimensional materials can effectively separate photogenerated electron-hole pairs under photoexcitation conditions, which can solve the problems of low carrier mobility and easy agglomeration of two-dimensional materials. Herein, the MoSe 2 loaded with ZnO (MoSe 2 @ZnO) was prepared by two-step hydrothermal and magnetron sputteringmethod. The results of scanning electron microscopy and transmission electron microscopy show that the MoSe 2 and MoSe 2 @ZnO composite material with controllable size are successfully prepared, and the agglomeration problem of the MoSe 2 is solved. The results of X-ray photoelectron spectroscopy show that the electrons at the Fermi level of MoSe 2 can be transferred to the Fermi level of ZnO to form a built-in electric field. When Fermi level of MoSe 2 and ZnO reaches the same position, the band bending can be caused, which can inhibit the recombination of photogenerated electron-hole pairs and enhance the carrier mobility. The Z-scan results show that MoSe 2 has nonlinear absorption coefficient of ∼10 −7 cm/W, and the reverse saturation absorption characteristics of MoSe 2 can be effectively improved by controlling the sputtering power The results show that MoSe 2 @ZnO has excellent photoelectric properties, so it has broad research prospects in optoelectronic devices and other development fields.
materials science, multidisciplinary
What problem does this paper attempt to address?