Abstract:A compact, gate‐tunable, nanoscale three‐terminal memristor is characterized and its potential in a leaky integrate‐and‐fire neuron circuit is explored. The device's ability to adjust the set voltage over a large range enables wide tuning of the spike probability of the LIF neuron via the gate voltage. Results highlight the advantages of this approach for neuromorphic computing applications. The human brain facilitates information processing via generating and receiving temporal patterns of short voltage pulses, a.k.a. neural spikes. This approach simultaneously grants low‐power operation as well as a high degree of noise immunity and fault tolerance at a small footprint and simplistic structure of the neurons. To date, the latter two key features are critically missing from the toolbox of artificial spiking neural network hardware, hindering the development of scalable and sustainable artificial intelligence (AI) platforms. Here, a compact, gate‐tunable neuron circuit is demonstrated, and its potential as a functional leaky integrate‐and‐fire (LIF) neuron is explored. It relies on a single nanoscale three‐terminal (3T) memristor device, which has been downscaled by 30% compared to previous work, where the set voltage and, thereby, the spiking probability of the neuron circuit can be widely tuned by the low‐voltage operation of the gate electrode. The influence of the gate voltage on the two‐terminal (2T) current–voltage characteristics is measured, statistically analyzed, and further utilized in a custom‐built LTspice model. The circuit simulations account for the experimentally observed, adjustable set voltage. The presented results demonstrate the merits of 3T memristors as compact, tunable, and versatile artificial neurons for neuromorphic computing applications.

Associative Learning of Integrate-and-Fire Neurons with Memristor-Based Synapses.

Implementation of Memristive Neural Networks with Spike-Rate-dependent Plasticity Synapses

Memristors: Associative Learning with Temporal Contiguity in a Memristive Circuit for Large‐Scale Neuromorphic Networks (Adv. Electron. Mater. 8/2015)

Design of In-Situ Learning Bidirectional Associative Memory Neural Network Circuit with Memristor Synapse

A Memristor-Based Neural Network Design for Associative Learning

Associative Learning with Temporal Contiguity in a Memristive Circuit for Large‐Scale Neuromorphic Networks

A neural network circuit with associative learning and forgetting process based on memristor neuromorphic device

A Memristor Neural Network Using Synaptic Plasticity and Its Associative Memory

Influences of short-term and long-term plasticity of memristive synapse on firing activity of neuronal network

A CMOS spiking neuron for dense memristor-synapse connectivity for brain-inspired computing

High-Order Associative Learning Based on Memristive Circuits for Efficient Learning

A Stacked Memristive Device Enabling Both Analog and Threshold Switching Behaviors for Artificial Leaky Integrate and Fire Neuron

Synchronization and Complex Dynamics in Locally Active Threshold Memristive Neurons with Chemical Synapses

A discrete memristive neuron and its adaptive dynamics

Design of Artificial Neurons of Memristive Neuromorphic Networks Based on Biological Neural Dynamics and Structures

Connecting Spiking Neurons to a Spiking Memristor Network Changes the Memristor Dynamics

Application of Improved Memristor in Character Associative Memory

A Three‐Terminal Memristive Artificial Neuron with Tunable Firing Probability

Memristor-Based Circuit Implementations of Recognition Network and Recall Network with Forgetting Stages

Memristive LIF Spiking Neuron Model and Its Application in Morse Code.

Firing Mechanism Based on Single Memristive Neuron and Double Memristive Coupled Neurons