Abstract:Electric-field control of magnetism is significant for the next generation of large-capacity and low-power data storage technology. In this regard, the renaissance of a multiferroic compound provides an elegant platform owing to the coexistence and coupling of ferroelectric (FE) and magnetic orders. However, the scarcity of single-phase multiferroics at room temperature spurs zealous research in pursuit of composite systems combining a ferromagnet with FE or piezoelectric materials. So far, electric-field control of magnetism has been achieved in the exchange-mediated, charge-mediated, and strain-mediated ferromagnetic (FM)/FE multiferroic heterostructures. Concerning the giant, nonvolatile, and reversible electric-field control of magnetism at room temperature, we first review the theoretical and representative experiments on the electric-field control of magnetism via strain coupling in the FM/FE multiferroic heterostructures, especially the CoFeB/PMN–PT [where PMN–PT denotes the (PbMn1/3Nb2/3O3)1−x-(PbTiO3)x] heterostructure. Then, the application in the prototype spintronic devices, i.e., spin valves and magnetic tunnel junctions, is introduced. The nonvolatile and reversible electric-field control of tunneling magnetoresistance without assistant magnetic field in the magnetic tunnel junction (MTJ)/FE architecture shows great promise for the future of data storage technology. We close by providing the main challenges of this and the different perspectives for straintronics and spintronics.

Magneto-Electric Coupling in a Multiferroic Tunnel Junction Functioning As a Magnetic-Field-Effect Transistor

Tunneling Magnetoresistance Modulation in a Magnetic Tunnel Junction with a Ferroelectric Barrier

Electric-field-induced strain-mediated magnetoelectric effect in CoFeB-MgO magnetic tunnel junctions

Magneto-ionic control of spin polarization in multiferroic tunnel junctions

Giant Nonvolatile Manipulation of Magnetoresistance in Magnetic Tunnel Junctions by Electric Fields Via Magnetoelectric Coupling

Electrical Control of Magnetic Proximity Effect in a Graphene/multiferroic Heterostructure

Multiferroic Tunnel Junctions And Ferroelectric Control Of Magnetic State At Interface

Enhanced Tunnelling Electroresistance Effect Due to a Ferroelectrically Induced Phase Transition at a Magnetic Complex Oxide Interface.

Strain-mediated magnetoelectric control of tunneling magnetoresistance in magnetic tunneling junction/ferroelectric hybrid structures

Strong Nonvolatile Magnon-Driven Magnetoelectric Coupling in Single-Crystal Co/[PbMg1/3Nb2/…

Electrical manipulation and detection of antiferromagnetism in magnetic tunnel junctions

Multiferroic Heterostructures and Tunneling Junctions

Novel Magnetic Field Modulation Concept Using Multiferroic Heterostructure for Magnetoresistive Sensors.

Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure

Nonvolatile Multilevel States in Multiferroic Tunnel Junctions

Nano-magnetic tunnel junctions controlled by electric field for straintronics

Enhanced Tunneling Magnetoresistance Effect via Ferroelectric Control of Interface Electronic/Magnetic Reconstructions

Giant Magnetoelectric Effect in Magnetic Tunnel Junctions Coupled to an Electromagnetic Environment

Electric-Field-Control of Non-Volatile Magnetization Switching in Multiferroic CoFeB/(011)-PMN-PT Heterostructures

Large Magnetoelectric Effect in Organic Ferroelectric Copolymer-Based Multiferroic Tunnel Junctions

Electronic structure, Curie temperature, and magnetic transport of a two-dimensional multiferroic heterostructure