Abstract:As power efficiency becomes essential in automotive applications, DC-DC converters are widely employed [1]. However, size and thermal limits have made it challenging to continue using standard CMOS-based converters. Gallium Nitride (GaN) FETs, on the other hand, have a much higher conductivity with small size/capacitance in comparison to silicon FETs, enabling a highly efficient power conversion at high switching frequency (f SW ). However, there are several issues that must be resolved before using GaN in automotive. High f SW incurs larger di/dt and dv/dt transitions which injects high frequency electromagnetic interference (EMI) noise into the input bus. This creates unwanted noise or even a malfunction in a safety-critical system. A bulky input filter can reduce EMI, but it greatly increases size and cost. Several techniques [2-5] are reported to mitigate EMI. Frequency hopping using discrete frequencies is proposed in [2], but cannot spread the frequency evenly to lower the peak noise effectively. Alternatively, a series resistor is typically added at the gate of the GaN FET to slow down the transition [3-4]. However, the switching loss is dramatically increased. To mitigate this, adjustable driving strength is proposed in [5]. Unfortunately, the sensing and driver delays confine its use in low f SW applications, where the switch node rising time is several tens or hundreds of ns. Another issue of high f SW operation is that it causes significant current and voltage spikes due to the parasitics at the drain/source of the high side GaN FET (M H ), which could lead to GaN VDS breakdown or damage on logic-level FETs. Thus, EMI noise suppression and reliable operation of GaN FETs remain as major challenges in realizing high f SW power converters for automotive-use.

GALS Design for On-chip Ground Bounce Suppression

An Improved Asynchronous Wrapper for GALS

A Tri-Slope Gate Driving GaN DC–DC Converter with Spurious Noise Compression and Ringing Suppression for Automotive Applications

25.2 A 10mhz 3-to-40v VIN Tri-Slope Gate Driving GaN DC-DC Converter with 40.5dbµv Spurious Noise Compression and 79.3% Ringing Suppression for Automotive Applications

GALS Network-on-Chip with a Distributed-Synchronous Mechanism

Methodology For Modeling Simultaneous Switching Noise In Bga Packaging

High Performance, Energy Efficiency, and Scalability with Gals Chip Multiprocessors

Dynamic Voltage and Frequency Scaling Architecture for Units Integration within a GALS NoC

Asynchronous Techniques for System-on-Chip Design

Performance and Power Analysis of Globally Asynchronous Locally Synchronous Multi-Processor Systems

Simultaneous Switching Noise Consideration for Power/Ground Network Optimization.

Ground bounce modelling for digital gigascale integrated circuits

Crosstalk Analysis and Suppression for a Closed-Loop Active IGBT Gate Driver

An Active Gate Driver Design to Reduce Voltage and Current Overshoots for SiC MOSFET Modules

Universal GALS Platform and Evaluation Methodology for Networks-on-chip

Slit-Surface Disturbance Lattice EBG Structure for Simultaneously Switching Noise Suppression in High-Speed Data Acquisition System

Implementing Tile-based Chip Multiprocessors with GALS Clocking Styles.

A Low-Area Multi-Link Interconnect Architecture for GALS Chip Multiprocessors

A Power Gating Scheme for Ground Bounce Reduction During Mode Transition

A Metastability Inference and Avoidance Technique for Near-Threshold-Voltage Network-on-Chip.

A GALS-Based Quad-Core Interconnection and Task Scheduling Mechanism Research