Crystals of para-Quaterphenyl and Its Trimethylsilyl Derivative. I: Growth from Solutions, Structure, and Crystal Chemical Analysis by the Hirschfeld Surface Method

V. A. Postnikov,N. I. Sorokina,M. S. Lyasnikova,G. A. Yurasik,A. A. Kulishov,T. A. Sorokin,O. V. Borshchev,E. A. Svidchenko,N. M. Surin
DOI: https://doi.org/10.1134/s1063774524601886
2024-11-20
Crystallography Reports
Abstract:The results of studying the growth of para -quaterphenyl (4P) and its derivative—4,4'''-bis(trimethylsilyl)- para -quaterphenyl (TMS-4P-TMS)—crystals from solutions are presented. It has been established that TMS-4P-TMS crystals exhibit better growth characteristics as compared to 4Р. Parameters of the phase transitions of 4P and TMS-4P-TMS in closed crucibles were refined using differential scanning calorimetry. The crystal structure of TMS-4P-TMS in the triclinic space group P ( Z = 2) has been decrypted for the first time using single-crystal X-ray diffraction and was studied in a wide temperature range. A crystallographic analysis of the studied compounds in crystals was performed using the Hirshfeld surface method, and modeling of intermolecular interactions was performed.
crystallography
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