Abstract:Two-dimensional (2D) van der Waals (vdW) ferromagnetic metals FexGeTe2 with x = 3-5 have raised significant interest in the scientific community. Fe5GeTe2 shows prospects for spintronic applications since the Curie temperature Tc has been reported near or higher than 300 K. In the present work, epitaxial Fe5-δGeTe2 (FGT) heterostructures were grown by Molecular Beam Epitaxy (MBE) on insulating crystalline substrates. The FGT films were combined with Bi2Te3 topological insulator (TI) aiming to investigate the possible beneficial effect of the TI on the magnetic properties of FGT. FGT/Bi2Te3 films were compared to FGT capped only with AlOx to prevent oxidation. SQUID and MOKE measurements revealed that the growth of Bi2Te3 TI on FGT films significantly enhances the saturation magnetization of FGT as well as the Tc well above room temperature (RT) reaching record values of 570 K. First-principles calculations predict a shift of the Fermi level and an associated enhancement of the majority spin (primarily) as well as the total density of states at the Fermi level suggesting that effective doping of FGT from Bi2Te3 could explain the enhancement of ferromagnetism in FGT. It is also predicted that strain induced stabilization of a high magnetic moment phase in FGT/Bi2Te3 could be an alternative explanation of magnetization and Tc enhancement. Ferromagnetic resonance measurements evidence an enhanced broadening in the FGT/Bi2Te3 heterostructure when compared to FGT. We obtain a large spin mixing conductance of g↑↓eff = 4.4 × 1020 m-2, which demonstrates the great potential of FGT/Bi2Te3 systems for spin-charge conversion applications at room temperature.

Spin stiffness and spin excitation gap of van der Waals ferromagnetic Fe3+δGeTe2

Spin Valve Effect in the Van Der Waals Heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2

Tunable Asymmetric Magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 Lateral Spin Valve.

Magnetic Ground State and Electron Doping Tuning of Curie Temperature in Fe_3GeTe_2: First-Principles Studies

Magnetic ground state and electron-doping tuning of Curie temperature in Fe 3 GeTe 2 : First-principles studies

Magnetic Dynamics of Two-Dimensional Itinerant Ferromagnet Fe3GeTe2 *

Identifying the Localized Feature of 3d Itinerant Electrons of Fe in the Van Der Waals Room-Temperature Ferromagnet Fe5GeTe2

Magnetic critical behavior of the van der Waals Fe5GeTe2 crystal with near room temperature ferromagnetism

Significant enhancement of ferromagnetism above room temperature in epitaxial 2D van der Waals ferromagnet Fe5- δGeTe2/Bi2Te3 heterostructures

Fe‐Intercalation Dominated Ferromagnetism of van der Waals Fe3GeTe2

Magnetic critical behavior of van der Waals Fe3GaTe2 with above-room-temperature ferromagnetism

Direct observation of competition between charge order and itinerant ferromagnetism in the van der Waals crystal Fe 5 − x GeTe 2

Unraveling the electronic structure and magnetic transition evolution across monolayer, bilayer, and multilayer ferromagnetic Fe 3 GeTe 2

Lattice dynamics, phonon chirality and spin-phonon coupling in 2D itinerant ferromagnet Fe3GeTe2

Large enhancement of Curie temperature in Fe3GeTe2 by Fe intercalation in the van der Waals gap

Sub-THz High Spin Precession Frequency in van der Waals Ferromagnet Fe3GaTe2

Two-dimensional itinerant ferromagnetism in atomically thin Fe3GeTe2

Itinerant ferromagnetism in van der Waals Fe 5 − x Ge Te 2 crystals above room temperature

Anisotropic magnetization dynamics in Fe5GeTe2 at room temperature

Large Magnetic Anisotropy in van der Waals Ferromagnet Fe3GaTe2 above Room Temperature