Strain-Controlled Superconductivity in Few-Layer NbSe 2

Cliff Chen,Protik Das,Ece Aytan,Weimin Zhou,Justin Horowitz,Biswarup Satpati,Alexander A. Balandin,Roger K. Lake,Peng Wei
DOI: https://doi.org/10.1021/acsami.0c08804
2020-07-28
Abstract:The controlled tunability of superconductivity in low-dimensional materials may enable new quantum devices. Particularly in triplet or topological superconductors, tunneling devices such as Josephson junctions, etc., can demonstrate exotic functionalities. The tunnel barrier, an insulating or normal material layer separating two superconductors, is a key component for the junctions. Thin layers of NbSe<sub>2</sub> have been shown as a superconductor with strong spin orbit coupling, which can give rise to topological superconductivity if driven by a large magnetic exchange field. Here we demonstrate the superconductor–insulator transitions in epitaxially grown few-layer NbSe<sub>2</sub> with wafer-scale uniformity on insulating substrates. We provide the electrical transport, Raman spectroscopy, cross-sectional transmission electron microscopy, and X-ray diffraction characterizations of the insulating phase. We show that the superconductor–insulator transition is driven by strain, which also causes characteristic energy shifts of the Raman modes. Our observation paves the way for high-quality heterojunction tunnel barriers to be seamlessly built into epitaxial NbSe<sub>2</sub> itself, thereby enabling highly scalable tunneling devices for superconductor-based quantum electronics.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c08804?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c08804</a>.Sample growth (S1), sample characterization (S2), variable range hopping fitting to the insulating sample (S3), and DFT calculations of the phonon spectrum of 1T-NbSe<sub>2</sub> (S4) (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c08804/suppl_file/am0c08804_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,nanoscience & nanotechnology
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