Highly Efficient Bulk-Crystal-Sized Exfoliation of 2D Materials under Ultrahigh Vacuum

Golam Haider,Michele Gastaldo,Bazlul Karim,Jan Plšek,Vaibhav Varade,Oleksandr Volochanskyi,Jana Vejpravová,Martin Kalbáč,Jan Plšek,Jana Vejpravová,Martin Kalbáč
DOI: https://doi.org/10.1021/acsaelm.3c01824
IF: 4.494
2024-03-26
ACS Applied Electronic Materials
Abstract:In the realm of materials science and nanotechnology, the pursuit of the scalable preparation of high-quality monolayers of two-dimensional (2D) materials is a significant challenge. Despite the widespread interest sparked by the unique quantum mechanical effects in these materials, achieving scalable and controlled syntheses remains hindered by a lack of suitable techniques. This work presents a facile exfoliation approach that successfully yields bulk-crystal-sized 2D monolayers, approaching 100% under ultrahigh vacuum (UHV) conditions. The process was demonstrated by exfoliating MoS2 on Au and Ag substrates. Raman spectroscopy reveals a strong dispersive interaction at the metal/MoS2 interface, inducing a high strain field on the topmost layer of the bulk crystal. This strain field’s inhomogeneous distribution reduces interlayer van der Waals interactions, enhancing the selectivity of monolayer exfoliation. Beyond scalable exfoliation, our method opens avenues for obtaining monolayers of materials unstable under ambient conditions, emphasizing its broader applicability in advancing the synthesis of 2D materials for diverse applications.
materials science, multidisciplinary,engineering, electrical & electronic
What problem does this paper attempt to address?