Abstract:Lead iodide (PbI2) as a layered material has emerged as an excellent candidate for optoelectronics in the visible and ultraviolet regime. Micrometer-sized flakes synthesized by mechanical exfoliation from bulk crystals or by physical vapor deposition have shown a plethora of applications from low-threshold lasing at room temperature to high-performance photodetectors with large responsivity and faster response. However, large-area centimeter-sized growth of epitaxial thin films of PbI2 with well-controlled orientation has been challenging. Additionally, the nature of grain boundaries in epitaxial thin films of PbI2 remains elusive. Here, we use mica as a model substrate to unravel the growth mechanism of large-area epitaxial PbI2 thin films. The partial growth leading to uncoalesced domains reveals the existence of inversion domain boundaries in epitaxial PbI2 thin films on mica. Combining the experimental results with first-principles calculations, we also develop an understanding of the thermodynamic and kinetic factors that govern the growth mechanism, which paves the way for the synthesis of high-quality large-area PbI2 on other substrates and heterostructures of PbI2 on single-crystalline graphene. The ability to reproducibly synthesize high-quality large-area thin films with precise control over orientation and tunable optical properties could open up unique and hitherto unavailable opportunities for the use of PbI2 and its heterostructures in optoelectronics, twistronics, substrate engineering, and strain engineering.

Edge Raman enhancement at layered PbI 2 platelets induced by laser waveguide effect

Edge Raman enhancement at layered PbI2 platelets induced by laser waveguide effect

Whispering gallery mode lasing from hexagonal shaped layered lead iodide crystals.

Controlled Growth and Reliable Thickness‐Dependent Properties of Organic–Inorganic Perovskite Platelet Crystal

Low Threshold Fabry-Pérot Mode Lasing from Lead Iodide Trapezoidal Nanoplatelets.

Anti‐Stokes Photoluminescence of Van Der Waals Layered Semiconductor PbI2

One-Step Vapor-Phase Synthesis and Quantum-Confined Exciton in Single-Crystal Platelets of Hybrid Halide Perovskites.

Modulation of Surface-Enhanced Raman Spectra by Depth Selective Excitation of Embedded Indium Tin Oxide Nanoisland Arrays

Orientation-Controlled Large-Area Epitaxial PbI2 Thin Films with Tunable Optical Properties

Few-Layer PbI2 Nanoparticle: A 2D Semiconductor with Lateral Quantum Confinement.

A Lead-Iodide Based Single Crystal Semiconductor: Exploring Multi-Orientation Photoconductive Behaviour Via Intervening Isopropyl Viologen Component Between The Inorganic [Pb2i6](N)(2-) Wires

Single Layer Lead Iodide: Computational Exploration of Structural, Electronic and Optical Properties, Strain Induced Band Modulation and the Role of Spin-Orbital-Coupling

Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals

Epitaxial 2D PbS Nanoplates Arrays with Highly Efficient Infrared Response.

Large-scale 2D PbI 2 monolayers: experimental realization and their indirect band-gap related properties

Millimeter-scale Growth of Highly Ordered CsPbBr3 Single-Crystalline Microplatelets on SiO2/Si Substrate by Chemical Vapor Deposition

Highly ordered arrays of particle-in-bowl plasmonic nanostructures for surface-enhanced raman scattering

Probing Excitons in Ultrathin PbS Nanoplatelets with Enhanced Near-Infrared Emission

The strain regulated physical properties of PbI2/g-C3N4 for potential optoelectronic device

Pb 2 TeV 2 O 10 : A Lead Vanadate Tellurate with Wide Mid-IR Transparency and Large Birefringence Induced by Multiple Birefringence-Active Groups

Unusual photocarrier and coherent phonon dynamics behaviors of layered PdSe2 unveiled by ultrafast spectroscopy of the edge surface