Abstract:We report on transport measurements in monolayer MoS 2 devices, close to the bottom of the conduction band edge. These devices were annealed in situ before electrical measurements. This allows us to obtain good ohmic contacts at low temperatures, and to measure precisely the conductivity and mobility via four-probe measurements. The measured effective mobility up to μ eff = 180 cm 2 /Vs is among the largest obtained in CVD-grown MoS 2 monolayer devices. These measurements show that electronic transport is of the insulating type for σ≤ 1.4e 2 /h and n ≤ 1.7×10 12 cm -2 , and a crossover to a metallic regime is observed above those values. In the insulating regime, thermally activated transport dominates at high temperature (T > 100 K). At lower temperatures, conductivity is driven by Efros-Schklovkii variable range hopping in all measured devices, with a universal and constant hopping prefactor, that is a clear indication that hopping is not phonon-mediated. At higher carrier density, and high temperature, the conductivity is well modeled by the Boltzmann equation for a non-interacting Fermi gas, taking into account both phonon and impurity scatterings. Finally, even if this apparent metal-insulator transition can be explained by phonon-related phenomena at high temperature, the possibility of a genuine 2D MIT cannot be ruled out, as we can observe a clear power-law diverging localization length close to the transition, and a one-parameter scaling can be realized.

Peierls-type metal-insulator transition in carbon nanostructures

Structural Trends Interpretation of the Metal-to-Semiconductor Transition in Deformed Carbon Nanotubes

Topological Phase Transition Between Distinct Weyl Semimetal States in MoTe2

Nanostructured Hybrid Carbon Nanotube/UltraHigh‐Temperature Ceramic Heterostructures: Microstructure Evolution and Forming Mechanism

Superconductivity in boron-doped carbon nanotube networks

Transitions Between Semiconductor and Metal Induced by Mixed Deformation in Carbon Nanotube Devices

Phase transitions on the surface of a carbon nanotube

Metal-To-Semiconductor Transition In Squashed Armchair Carbon Nanotubes

The Relationship Between Quantum Transport and Microstructure Evolution in Carbon-Sheathed Pt Granular Metal Nanowires

Novel Penta-Graphene Nanotubes: Strain-Induced Structural and Semiconductor-Metal Transitions

Electrically Induced, Non-Volatile, Metal Insulator Transition in a Ferroelectric Gated MoS$_2$ Transistor

Metal-to-insulator Transition in Pt-doped TiSe$_2$ Driven by Emergent Network of Narrow Transport Channels

Pressure-induced Transition in Magnetoresistance of Single-Walled Carbon Nanotubes.

Measurement and Simulation of Carbon Nanotube'S Piezoresistance Property by A Micro/Nano Combined Structure

Temperature Dependence of Resistivity of Carbon Micro/nanostructures: Microscale Spatial Distribution with Mixed Metallic and Semiconductive Behaviors

PN junction and band to band tunneling in carbon nanotube transistors at room temperature

Metal-insulator crossover in monolayer MoS 2

Superconductivity in carbon nanotubes coupled to transition metal atoms

Bandgap Opening in MoTe2 Thin Flakes Induced by Surface Oxidation

Corrugation-Induced Metal-Semiconductor Transition in Single-Wall Carbon Nanotubes with A Small Radius

Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures.