Molecular dynamics simulation of melting and sintering process of multi-scale copper nanoparticles
Guannan Yang,Xiangang Hua,C. Cui,Chao Li,Yu Zhang,Bin Yang,Tingyu Lin,ChuMan Ho
DOI: https://doi.org/10.1109/ICEPT50128.2020.9202915
2020-08-01
Abstract:With the advent of the information age, electronic packaging technology is developing in the direction of high power, high density, miniaturization, high reliability and green packaging. Because the third-generation semiconductor material has advantages over traditional semiconductors, it is considered to be a strategic technology with significant influence. Become a hot topic of research. However, due to the limitations of traditional packaging materials, it is difficult for third-generation semiconductor devices to take advantage of their low loss and high electrical performance, and the operating temperature range is narrow. Solder has become one of the technical bottlenecks of wide-sealed semiconductor device packaging and high-power device high-temperature packaging. In this paper, the molecular dynamics simulation software Lammps was used to simulate the copper nanoparticles with different nanometer sizes under low temperature and pressureless sintering conditions, and the interdiffusion sintering neck growth, radius of gyration and mixed size of the nanometer copper particles under different size conditions were discussed. The energy distribution of the atom in the particle model reveals the transformation tendency of the internal lattice of the nano-copper particles during the heating process. Provide a certain theoretical basis for the development of the experiment.
Engineering,Materials Science