Enhanced Ferroelectric Polarization in Epitaxial Films

Yajie Han,Zhijie Liu,Zhiyu Liu,Hongying Chen,Pengxiang Hou,Jiayi Li,Yuqi Wang,Yu Deng,Yurong Yang,Di Wu
DOI: https://doi.org/10.1103/physrevapplied.19.054064
IF: 4.6
2023-05-20
Physical Review Applied
Abstract:Remanent polarization is a key parameter of a ferroelectric material. A large remanent polarization is favorable for various ferroelectric applications. Here, we report a large remanent polarization of 116.8 μC cm−2 observed in BiMg2/3Nb1/3O3 (BMN)-modified BiFeO3 (BFO) thin films, epitaxially deposited on (001)-oriented SrTiO3 substrates buffered with La2/3Sr1/3MnO3 electrodes. Combined experimental analyses and first-principles calculations reveal that the incorporation of 10 mol% BMN into BFO increases both the intrinsic and extrinsic contributions, resulting in doubled polarization. The intrinsic polarization calculated for BFO-BMN is larger than that of BFO due to enhanced ionic displacements. Compared with epitaxial BFO films in a rhombohedral structure with an interaxial angle of α = 89.72° and quasitetragonal c / a = 1.018, the epitaxial BFO-BMN films become more tetragonal-like, with α = 89.91° and c / a = 1.037. Moreover, a unique rotated twinning-domain structure is developed in the BFO-BMN thin films, further increasing the out-of-plane polarization by rotating the [111] direction toward the film's normal. These results provide additional opportunities to increase ferroelectric polarization through composition engineering. https://doi.org/10.1103/PhysRevApplied.19.054064 © 2023 American Physical Society
physics, applied
What problem does this paper attempt to address?