Large Room Temperature Negative Electrocaloric Effect in Novel Antiferroelectric PbHfO 3 Films

Xian-Xiong Huang,Tian-Fu Zhang,Rong-Zhen Gao,Hou-Bing Huang,Peng-Zu Ge,Hui Tang,Xin-Gui Tang
DOI: https://doi.org/10.1021/acsami.1c03079
2021-04-30
Abstract:Extremely high temperature in a chip will severely affect the normal operation of electronic equipment; however, the traditional air conditioning cooling technology is unsuitable for integrated circuit cooling. It is necessary to develop convenient and high-efficiency cooling techniques. In this paper, PbHfO<sub>3</sub> antiferroelectric (PHO AFE) film was fabricated by a sol–gel method and was first found to be a promising electrocaloric (EC) material with high temperature change (Δ<i>T</i> ∼ −7.7 K) and acceptable EC strength (|Δ<i>T</i>/Δ<i>E</i>| ∼ 0.023 K cm kV<sup>–1</sup>) at room temperature. In addition to the negative EC effect (ECE), a large positive ECE can be observed at high temperature. The outstanding ECEs and their combination will make the PHO film one of the potential candidates for next-generation solid-state refrigeration. To understand the underlying physical mechanism for positive and negative ECEs in the PHO AFE film, a modified Ginzburg–Landau–Devonshire free-energy theory is adopted.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c03079?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c03079</a>.Specific heat capacity of PHO ceramic and calculated results for <i>P</i>–<i>T</i> and Δ<i>T</i>–<i>T</i> (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c03079/suppl_file/am1c03079_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,nanoscience & nanotechnology
What problem does this paper attempt to address?