Picosecond optospintronic tunnel junctions

Luding Wang,Houyi Cheng,Pingzhi Li,Youri L. W. van Hees,Yang Liu,Kaihua Cao,Reinoud Lavrijsen,Xiaoyang Lin,Bert Koopmans,Weisheng Zhao

DOI: https://doi.org/10.1073/pnas.2204732119

IF: 11.1

2022-06-06

Proceedings of the National Academy of Sciences

Abstract:Significance Spintronic devices have become promising candidates for next-generation memory architecture. However, state-of-the-art devices, such as perpendicular magnetic tunnel junctions (MTJs), are still fundamentally constrained by a subnanosecond speed limitation, which has remained a long-lasting scientific obstacle in the ultrafast spintronics field. The highlight of our work is the demonstration of an optospintronic tunnel junction, an all-optical MTJ device which emerges as a new category of integrated photonic–spintronic memory. We demonstrate 1) laser-induced deterministic and efficient writing by an all-optical approach and electrical readout by tunnel magnetoresistance, 2) writing speed within 10 ps, demonstrated by femtosecond-resolved measurements, and 3) integration with state-of-the-art MTJ performance and a complementary metal–oxide–semiconductor-compatible fabrication progress.

multidisciplinary sciences