Buried Interface Passivation of Sn‐Pb Narrow‐Bandgap Perovskite for Highly Efficient All‐Perovskite Tandem Solar Cells

Jin Zhang,Weisheng Li,Xiaojing Lv,Yitong Ji,Wenchao Huang,Tongle Bu,Zhiwei Ren,Canglang Yao,Fuzhi Huang,Yi-Bing Cheng,Jinhui Tong
DOI: https://doi.org/10.1002/solr.202400184
IF: 9.1726
2024-05-10
Solar RRL
Abstract:All‐perovskite tandem solar cells (ATSCs) present a remarkable opportunity to overcome the Shockley‐Queisser (S‐Q) efficiency limit of single‐junction solar cells. However, the stability of ATSCs significantly lags that of their pure Pb‐based single‐junction counterparts. Recent studies have identified that the widely used poly(3,4‐ethylenedioxythiophene)‐poly(styrenesulfonate) (PEDOT:PSS) hole transport layer (HTL) in narrow‐bandgap (NBG) tin‐lead (Sn‐Pb) perovskite solar cells (PSCs) hinders the efficiency and stability. Herein, we proposed a patching strategy to optimize the interface between perovskite and PEDOT:PSS. Both theoretical and experimental studies revealed that PenA+ and Ac‐ can decrease defect states at the interface and strengthen the binding between PEDOT:PSS and Sn‐Pb perovskite. Furthermore, the pentylammonium acetate (PenAAc) interlayer improves carrier extraction and suppresses the oxidation of Sn2+ to Sn4+. With the PenAAc buried layer, the fabricated NBG PSCs obtained an impressive power conversion efficiency (PCE) of 21.86%, along with significantly enhanced device stability. By integrating the buried passivated NBG Sn‐Pb perovskite with a 1.75 eV wide‐bandgap (WBG) PSC, the two‐terminal ATSC achieved a PCE of 26.54%. This work provides a valuable approach to fabricate efficient and stable NBG PSCs. This article is protected by copyright. All rights reserved.
energy & fuels,materials science, multidisciplinary
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