Fabrication of Black In2O3 with Dense Oxygen Vacancy through Dual Functional Carbon Doping for Enhancing Photothermal CO2 Hydrogenation

Yuhang Qi,Jiawei Jiang,Xichen Liang,Shuxin Ouyang,Wenbo Mi,Shangbo Ning,Lei Zhao,Jinhua Ye
DOI: https://doi.org/10.21203/rs.3.rs-102590/v1
2020-11-09
Abstract:Abstract Photothermocatalytic CO 2 reduction as the channel of the energy and environmental issues resolution has captured persistent attention in recent years. In 2 O 3 has been prompted to be a potential photothermal catalyst in this sector on account of unique physicochemical properties. However, different from the metal-based photothermal catalyst with the nature of efficient light-to-thermal conversion and H 2 dissociation, the wide-bandgap semiconductor needs to be modified to possess wide-wavelength-range absorption and the active surface. It remains a challenge to achieve the two aims simultaneously via single material modulation approach. In this study, one strategy of carbon doping can empower In 2 O 3 with two advantageous modifications. The carbon doping can reduce the formation energy of oxygen vacancy, which induces the generation of oxygen-vacancy-riched material. The introduction of oxygen defect levels and carbon doping levels in band gap of In 2 O 3 significantly reduces this band gap, which endows it full-spectral and intensive solar light absorption. Therefore, the carbon doped In 2 O 3 achieves effective light-to-thermal conversion and delivers a 123.6 mmol g − 1 h − 1 of CO generation rate with near-unity selectivity, as well as prominent stability in photothermocatalytic CO 2 reduction.
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