Influences of Ce 3+ dosage, NH 4 Cl flux, and post-treatment on the structure and luminescence properties of Ce-activated La–Si–O–N for laser lighting

Ke Sun,Haibin Lin,Rui Zhang,Jinlong Zhu,Liping Wang,Songbai Han,Xiaofei Wang

DOI: https://doi.org/10.1016/j.optmat.2023.114362

IF: 3.754

2023-09-19

Optical Materials

Abstract:The emerging laser-driven phosphor-converted white laser diodes (w-LDs) demand highly efficient and thermally stable color converters. To this end, the Ce 3+ luminescence in the rekindled La–Si–O–N host, and the impacts of NH 4 Cl flux and post-processing are investigated systematically. On the basis of the XRD results, well crystalline Ce 3+ -doped La 5 Si 3 O 12 N and LaSiO 2 N are obtained at 1600 °C for 5 h and 1500 °C for 4 h, respectively. Impressively, the representative La 5 Si 3 O 12 N:0.04Ce 3+ and LaSiO 2 N:0.03Ce 3+ exhibit a broad excitation band from 240 nm to 400 nm, peaking at around 360 nm, which is well matched with emission from near-UV (n-UV) chip. Under excitation by a n-UV laser, the La 5 Si 3 O 12 N:0.04Ce 3+ and LaSiO 2 N:0.03Ce 3+ produce bright blue light in a wide emission band from 360 nm to 550 nm. The CIE chromaticity diagram reveals the tunability of the hue of these phosphors. The quenching temperature is determined to be 396 K and 429 K for La 5 Si 3 O 12 N:0.04Ce 3+ and LaSiO 2 N:0.03Ce 3+ respectively, indicating superior thermal stability. The addition of 3 wt% NH 4 Cl flux much enhances the emission intensity of both La 5 Si 3 O 12 N:0.04Ce 3+ and LaSiO 2 N:0.03Ce 3+ . Furthermore, the post-treatments markedly improve the luminescence properties by increasing the crystallinity, reducing the surface defect, and changing the morphology. Therefore, it is believed that the present work has promising applications in LD lighting and promoting the development of laser display.

materials science, multidisciplinary,optics