Pressure-Induced Structural Phase Transition and Metallization of CrCl 3 under Different Hydrostatic Environments up to 50.0 GPa
Meiling Hong,Lidong Dai,Haiying Hu,Xinyu Zhang,Chuang Li,Yu He
DOI: https://doi.org/10.1021/acs.inorgchem.1c03486
IF: 4.6
2022-03-15
Inorganic Chemistry
Abstract:High-pressure structural, vibrational, and electrical transport properties of CrCl3 were investigated by means of Raman spectroscopy, electrical conductivity, and high-resolution transmission electron microscopy under different hydrostatic environments using the diamond anvil cell in conjunction with the first-principles theoretical calculations up to 50.0 GPa. The isostructural phase transition of CrCl3 occurred at 9.9 GPa under nonhydrostatic conditions. As pressure was increased up to 29.8 GPa, CrCl3 underwent an electronic topological transition accompanied by a metallization transformation due to the discontinuities in the Raman scattering and electrical conductivity, which is possibly belonging to a typical first-order metallization phase transition as deduced from first-principles theoretical calculations. As for the hydrostatic condition, a ∼2.0 GPa pressure delay in the occurrence of two corresponding transformations of CrCl3 was observed owing to the different deviatoric stress. Upon decompression, we found that the phase transformation from the metal to semiconductor in CrCl3 is of good reversibility, and the obvious pressure hysteresis effect is observed under different hydrostatic environments. All of the obtained results on the structural, vibrational, and electrical transport characterizations of CrCl3 under high pressure can provide a new insight into the high-pressure behaviors of representative chromium trihalides CrX3 (X = Br and I) under different hydrostatic environments.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.inorgchem.1c03486.High-pressure Raman spectra of CrCl3 under hydrostatic conditions and their corresponding pressure-dependent Raman shift, Raman fwhm, and spacings in the Raman shift during the processes of compression and decompression, calculated electronic band structures of metallic CrCl3 at different Hubbard U values (U = 0.0 eV and U = 3.0 eV) and at a fixed pressure of 34.7 GPa, and linear fitting results of the pressure-dependent Raman shift, Raman fwhm, and spacings in the Raman shift for CrCl3 under different hydrostatic environments during compression (PDF)This article has not yet been cited by other publications.
chemistry, inorganic & nuclear