Study of Short-Term and Long-Term Memories by Hodgkin–Huxley Memristor

L. Wen,C. K. Ong
DOI: https://doi.org/10.1142/s0218127424500408
IF: 2.45
2024-02-01
International Journal of Bifurcation and Chaos
Abstract:Long-term memory (LTM ) and short-term memory (STM ) and their evolution from one to the other are important mechanisms to understand brain memory. We use the Hodgkin–Huxley (HH ) model, a well-tested and closest model to biological neurons and synapses, to shine some light on LTM and STM memorization mechanisms. The role of [Formula: see text] and [Formula: see text] ion channels playing in LTM and STM process is carefully examined by using three different types of input signals, namely, a step DC voltage, a positive part of sinusoidal wave and periodic square signal with read voltage. Results are analyzed based on first-order [Formula: see text] memristor and second-order [Formula: see text] memristor.
mathematics, interdisciplinary applications,multidisciplinary sciences
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