Microscopic piezoelectric behavior of clamped and membrane (001) PMN-30PT thin films

A. Brewer,S. Lindemann,B. Wang,W. Maeng,J. Frederick,F. Li,Y. Choi,P. J. Thompson,J. W. Kim,T. Mooney,V. Vaithyanathan,D. G. Schlom,M. S. Rzchowski,L. Q. Chen,P. J. Ryan,C. B. Eom

DOI: https://doi.org/10.1063/5.0068581

IF: 4

2021-11-15

Applied Physics Letters

Abstract:Bulk single-crystal relaxor-ferroelectrics, like Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT), are widely known for their large piezoelectricity. This is attributed to polarization rotation, which is facilitated by the presence of various crystal symmetries for compositions near a morphotropic phase boundary. Relaxor-ferroelectric thin films, which are necessary for low-voltage applications, suffer a reduction in their piezoelectric response due to clamping by the passive substrate. To understand the microscopic behavior of this adverse phenomenon, we employ the AC electric field driven in-operando synchrotron x-ray diffraction on patterned device structures to investigate the piezoelectric domain behavior under an electric field for both a clamped (001) PMN-PT thin film on Si and a (001) PMN-PT membrane released from its substrate. In the clamped film, the substrate inhibits the field-induced rhombohedral (R) to tetragonal (T) phase transition resulting in a reversible R to Monoclinic (M) transition with a reduced longitudinal piezoelectric coefficient d33 < 100 pm/V. Releasing the film from the substrate results in recovery of the R to T transition and results in a d33 > 1000 pm/V. Using diffraction with spatial mapping, we find that lateral constraints imposed by the boundary between the active and inactive materials also inhibit the R to T transition. Phase-field calculations on both clamped and released PMN-PT thin films simulate our experimental findings. Resolving the suppression of thin film piezoelectric response is critical to their application in piezo-driven technologies.

physics, applied