Novel Strategy of Constructing Hollow Ga 2 O 3 @N-CQDs as a Self-Healing Anode Material for Lithium-Ion Batteries

Jiaqi Guo,Fangliang Gao,Dongyang Li,Xingjun Luo,Yiming Sun,Xingfu Wang,Zhilin Ran,Qibao Wu,Shuti Li
DOI: https://doi.org/10.1021/acssuschemeng.0c03756
2020-08-18
Abstract:Self-healing materials arouse much attention because of their recoverable morphologies during (dis)charge. Herein, we report an effective and practical synthesis strategy that can adequately utilize the self-healing feature to achieve advanced integrative performance. The hollow Ga<sub>2</sub>O<sub>3</sub>@nitrogen-doped carbon quantum dot (H-Ga<sub>2</sub>O<sub>3</sub>@N-CQD) nanospheres are synthesized via a facile approach as an anode material for lithium-ion batteries (LIBs). In this anode, the self-healing capability is derived from the Ga generated in the conversion reaction. On account of the feasible structure design and the binding N-CQD coating, the material structure can be well preserved during (dis)charging. As a result, the anode material delivers an initial discharge capacity of 1348.5 mAh g<sup>–1</sup> at 0.1 A g<sup>–1</sup> and an invertible capacity of 700.5 mAh g<sup>–1</sup> under 0.5 A g<sup>–1</sup> after 500 cycles. Endowed by the unique structural design, the H-Ga<sub>2</sub>O<sub>3</sub>@N-CQDs can deliver high-current-density circulation performance and long-term cycle stability, which has prospects for large-scale applications in high-energy-density LIBs. Meanwhile, the rational framework design offers new insights into the structure-building construction of self-healing materials.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acssuschemeng.0c03756?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acssuschemeng.0c03756</a>.XRD pattern of the N-CQDs; XPS survey spectrum of the H-Ga<sub>2</sub>O<sub>3</sub>@N-CQDs; cycling performance of the H-Ga<sub>2</sub>O<sub>3</sub>@N-CQD electrode at 2.0 A g<sup>–1</sup>; rate property of the H-Ga<sub>2</sub>O<sub>3</sub> electrode under various current densities; (dis)charge profiles for the rate performance of the H-Ga<sub>2</sub>O<sub>3</sub>@N-CQDs; equivalent circuit model for the impedance spectra after cycle; TEM images of the H-Ga<sub>2</sub>O<sub>3</sub>@N-CQDs before cycling and after 20 cycles; and CV curves of the H-Ga<sub>2</sub>O<sub>3</sub> electrode at different scan rates; relationship between peak currents and scan rates; CV profile and the separation of the capacitive and diffusion contribution at 0.6 mV s<sup>–1</sup>; and contribution ratio of capacitive at various scan rates (<a class="ext-link" href="/doi/suppl/10.1021/acssuschemeng.0c03756/suppl_file/sc0c03756_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
chemistry, multidisciplinary,engineering, chemical,green & sustainable science & technology
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