A Kinetic Model for the Generation and Annihilation of Thermally Induced Carrier Donors in a Semiconducting Metal‐Oxide Thin Film (Small 41/2022)

Yuqi Wang,Wei Jiang,Xinying Xie,Zhihe Xia,Man Wong

DOI: https://doi.org/10.1002/smll.202270221

IF: 13.3

2022-10-15

Small

Abstract:Metal‐Oxide Semiconductors In article number 2203346, Zhihe Xia, Man Wong, and co‐workers propose a 3‐parameter equation based on a kinetic model involving oxidant diffusion and an oxidation‐reduction reaction of intrinsic donor defects. It is shown to be applicable to common metal‐oxide semiconductors and is deployed to the characterization of donor defects.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology