Two-Dimensional Direct Semiconductor Boron Monochalcogenide γ-BTe: Room-Temperature Single-Bound Exciton and Novel Donor Material in Excitonic Solar Cells

Yuanfeng Xu,Yifan Liu,Ying Chen,Yiming Zhang,Congcong Ma,Hao Zhang,Songsong Sun,Yanju Ji
DOI: https://doi.org/10.1021/acsami.0c15999
2020-12-16
Abstract:Recently, excitonic solar cells (XSCs) with high photovoltaic performance have raised research interests because of their high power conversion efficiencies (PCEs). Herein, by using first-principles calculations, we predict that γ-BX (X = S, Se, Te) monolayers are direct semiconductors with the band gaps of 2.94, 2.71, and 1.32 eV, respectively, and maintain semiconduction in the broad strain range of 0% ≤ δ ≤ 5%. The moderate direct band gap, high transport property, dramatically high absorption from visible to the ultraviolet region, and extraordinary excitonic behavior of monolayer γ-BTe, render it promising for next-generation optoelectronic and photovoltaic devices. By choosing monolayer GeP<sub>2</sub> as a proper acceptor material, the practical upper limit of PCE for the heterobilayers of γ-BTe/GeP<sub>2</sub> reaches up to 21.76% (22.95% under strain), comparable to typical heterobilayer solar cells, making it a competitive donor material for photovoltaic device applications.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c15999?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c15999</a>.Computational details of cohesive energy, optical and carrier mobility, AIMD simulations at 500 and 1000 K, calculated strain energy as a function of strain (δ), uniaxial stress–strain relation, orbital-projected band structure, strain-shift of VBM and CBM of γ-BX; electronic band structure of γ-BS under the <i>G</i><sub>0</sub><i>W</i><sub>0</sub> method, optical absorption of monolayer γ-BTe calculated by <i>G</i><sub>0</sub><i>W</i><sub>0</sub> + BSE and <i>G</i><sub>0</sub><i>W</i><sub>0</sub> + RPA method; atomic structure, electronic band structure and optical properties of 1–3 layered γ-BTe; and table of energy per atom for different phases of BX and PCE of γ-BTe/GeP<sub>2</sub> under strain engineering (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c15999/suppl_file/am0c15999_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,nanoscience & nanotechnology
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