A Narrowband Red-Emitting Asymmetric Iridium(III) Complex Featuring B- and N-Embedded π-Conjugation Units: Structure, Photophysics and OLED Application

Meng Wu,Nengquan Li,Chao Shi,Jialiang Song,Ruoqi Zeng,Feiyang Li,Qiuxia Li,Aihua Yuan,Chuluo Yang

DOI: https://doi.org/10.1039/d2qi02377f

IF: 7.779

2022-12-24

Inorganic Chemistry Frontiers

Abstract:We have designed and synthesized a new B- and N-embedded asymmetric heteroleptic phosphorescent iridium(III) complex IrBNacac with ambipolar character. The X-ray diffraction technique shows that the two B- and N-embedded π-conjugation units in the complex exhibit good planarity and induce rich π-π interactions in crystal state. More importantly, it exhibits an effective red emission (623 nm) in the thin film state with a very narrow full width at half maximum (FWHM = 50 nm, 0.158 eV), even narrower than that of model complexes (53 nm, 0.162 eV for IrBBacac and 62 nm, 0.224 eV for IrNNacac). DFT calculation demonstrates that the lowest excited triplet state (T1) of the complex IrBNacac exhibits richer excited state characters than that of model complexes, including a charge transfer transition from the N-embedded ligand to B-embedded ligand (3LLCT), a metal-to-ligand charge transfer transition (3MLCT), along with an intraligand charge transfer (3ILCT). Considering good photophysical property and solubility, the red-emitting complex IrBNacac was used as the emitting layer of a solution-processed OLED device, and achieved good maximum external quantum efficiency (EQE) (4.9 %) peaking at 625 nm with CIE coordinates (0.64, 0.35), accompanied by a low turn-on voltage. This research provides an important strategy for the design of narrowband red-emitting phosphorescent iridium complexes and their optoelectronic applications.

chemistry, inorganic & nuclear