Rapid growth of SiC single crystals using CVD-SiC block sources via a sublimation method

Seong-Min Jeong,Yong-Hyeon Kim,Ju-Hyeong Sun,Jae-Hyeon Park,Yun-Ji Shin,Si-Young Bae,Chang-Min Kim,Won-Jae Lee

DOI: https://doi.org/10.1039/d4ce00268g

IF: 3.756

2024-05-16

CrystEngComm

Abstract:By adopting CVD-SiC recycled blocks as a SiC source, SiC crystals were successfully grown with a high growth rate of 1.46 mm h −1 via the PVT method. The micropipe density and the dislocation density of the grown crystal suggested good crystal quality despite its high growth rate.

chemistry, multidisciplinary,crystallography