Analytical Scaling of Trap-Limited Current in 2-D Ultrathin Dielectrics
Chun Yun Kee,Yee Sin Ang,Er-Ping Li,L. K. Ang
DOI: https://doi.org/10.1109/ted.2022.3222279
IF: 3.1
2023-03-29
IEEE Transactions on Electron Devices
Abstract:For charge injection from an electrode into a trap-filled dielectric slab, its current–voltage ( – ) characteristics are governed by the Mark–Helfrich (MH) law. By matching the experimentally measured – characteristics to a right – model, one can characterize the microscopic properties of the dielectric like its carrier mobility and traps distribution. The original MH law was developed for a bulk solid and may not be valid for modern ultrathin dielectrics used in 2-D electronics. Here, we revise the MH law for an ultrathin trap-filled dielectric of length biased with a voltage of . Our model suggests a new scaling of the current line density: , where = (2.8, 2.03) and = (1.02, 0.94) are numerical values for two different geometrical (edge, strip) contacts, respectively. Using this 2-D ultrathin MH law, we demonstrate that the estimated carrier mobility can be signifi- antly different from the traditional MH law. Under the same material properties, our model also highlights that strip contact geometry will always lead to a larger current flow than edge contact geometry. Thus, the developed model should be useful for the characterization of the ultrathin dielectrics used in 2-D materials-based electronics, organic semiconductors, and thin-film electronics.
engineering, electrical & electronic,physics, applied