Abstract:Artificial intelligence has made remarkable advancements in recent years, leading to the development of algorithms and models capable of handling ever-increasing amounts of data. The computational demands of these algorithms necessitate circuit and architecture designs that go beyond the von-Neumann paradigm. Content addressable memories (CAMs), which implement parallel associative search functionality within memory blocks to overcome the memory wall bottleneck, have proven to be effective for data-intensive tasks. While current CAM designs have achieved higher storage density and energy efficiency than their CMOS-based counterparts by leveraging emerging non-volatile memories (NVM), most of these implementations are limited to binary storage cells. In this work, we propose SEE-MCAM, scalable and compact multi-bit CAM (MCAM) designs that utilize the three-terminal ferroelectric FET (FeFET) as the proxy. By exploiting the multi-level-cell characteristics of FeFETs, our proposed SEE-MCAM designs enable multi-bit associative search functions and achieve better energy efficiency and performance than existing FeFET-based CAM designs. We validated the functionality of our proposed designs by achieving 3 bits per cell CAM functionality, resulting in 3x improvement in storage density. The area per bit of the proposed SEE-MCAM cell is 8% of the conventional CMOS CAM. We thoroughly investigated the scalability and robustness of the proposed design. Evaluation results suggest that the proposed 2FeFET-1T SEE-MCAM achieves 9.8x more energy efficiency and 1.6x less search latency compared to the CMOS CAM, respectively. When compared to existing MCAM designs, the proposed SEE-MCAM can achieve 8.7x and 4.9x more energy efficiency than ReRAM-based and FeFET-based MCAMs, respectively. Benchmarking results show that our approach provides up to 3 orders of magnitude improvement in speedup and energy efficiency over a GPU implementation in accelerating a novel quantized hyperdimensional computing (HDC) application.

0.765-FJ/Bit/Search Content Addressable Memory Using Search Line Pre-Charge-Free (SLPF) Scheme

A Scalable 2T-1Fefet Based Content Addressable Memory Design for Energy Efficient Data Search

Energy Efficient Data Search Design and Optimization Based on a Compact Ferroelectric FET Content Addressable Memory

Analog Content Addressable Memory using Ferroelectric: A Case Study of Search-in-Memory

A Scalable Design of Multi-Bit Ferroelectric Content Addressable Memory for Data-Centric Computing

Design of Ultracompact Content Addressable Memory Exploiting 1T-1MTJ Cell

An Ultracompact Single-Ferroelectric Field-Effect Transistor Binary and Multibit Associative Search Engine

SEE-MCAM: Scalable Multi-bit FeFET Content Addressable Memories for Energy Efficient Associative Search

An Ultra-Compact Single FeFET Binary and Multi-Bit Associative Search Engine

The Implementation of Low-Power CAM with Fully Adiabatic Driving for Large Node Capacitances

Ferroelectric Ternary Content Addressable Memories for Energy-Efficient Associative Search.

A Low Power And High Speed Cam Design Using Pulsed Voltage For Search-Line

Energy-Aware Designs of Ferroelectric Ternary Content Addressable Memory.

Design of A High-speed Low-power CAM

Single-Ferroelectric FET based Associative Memory for Data-Intensive Pattern Matching.

CSA-CiM: Enhancing Multi-Functional Computing-in-Memory with Configurable Sense Amplifiers

A 0.75V 10nm FinField-Effect Transistor Based Hybrid Self Controlled PreCharge Free Content Addressable Memory for Low Standby Power Applications

Low Power Content Addressable Memory Designing and Implementation Using Voltage Swing Self Adjustable Match Line Technique

CapCAM: A Multilevel Capacitive Content Addressable Memory for High-Accuracy and High-Scalability Search and Compute Applications

FeCAM: A Universal Compact Digital and Analog Content Addressable Memory Using Ferroelectric