Abstract:A class of ultrabroadband NIR phosphors with excellent luminescence properties while free of rare‐metal elements, is developed by revealing and then manipulating the weak‐field‐site occupation of Cr3+ in spinel compounds that are conventionally believed to only show strong‐field‐site occupation. The resulting NIR phosphor‐converted LED possesses unprecedentedly high brightness, ultra‐wide spectral coverage, and low cost. Trivalent chromium (Cr3+) is an attractive near‐infrared (NIR) emitter, but its ultrabroadband NIR emission is limited to host crystals containing large amounts of rare‐metal elements and usually suffers from low internal quantum efficiency (IQE) and poor thermal stability. Here, a class of high‐performance, rare‐metal‐free ultrabroadband NIR phosphors, are reported by revealing that weak‐field Cr3+ centers featuring broadband NIR emission with near‐unity IQEs are intrinsic, though in trace quantities, to Cr3+ doped MgAl2O4 spinel (MAS) and its derivatives well‐known for their narrowband far‐red emission. It is shown that such weak‐field Cr3+ centers stem from cation inversion ubiquitous in spinel compounds, and their quantity can be increased simply by superstoichiometric Al2O3/Ga2O3. Then SiO2 is introduced into Al2O3‐excess MAS to break the inversion symmetry of Cr3+ centers for greatly improving the probabilities of their otherwise parity‐forbidden 3d–3d transitions. The as‐fabricated phosphor‐converted light‐emitting diodes are capable of emitting ultrabroadband NIR light with high photoelectric efficiency (16.0%) and optical power (180.8 mW), and excellent spectral stability, which apparently outperforms existing state‐of‐the‐art devices.

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