Abstract:All‐dielectric (especially silicon) nanostructures that are capable of low‐loss sub‐wavelength light localization are favorable for miniaturized all‐optical or optoelectronic chips. Recently, Si waveguides have been integrated with the 2D transition‐metal dichalcogenides (TMDCs) with atomic thinness and intense light–matter interactions for high‐performance optoelectronic devices. However, further miniaturized and nanoscale optoelectronic devices are highly necessary and can be realized using all‐dielectric Si nanostructures. So far, realizing electrically controlled coupling between all‐dielectric nanostructures and TMDCs is challenging at the subwavelength scale. Here, the electrically controlled optical nanopixels using individual Si nanospheres are reported, which are conventional all‐dielectric units with strong Mie‐type magnetic resonances, wrapped in suspended WS2 monolayers. By applying gate voltages, deformation of the WS2 monolayer occurs as an opening or a closing umbrella. As a result, the scattering intensities are tuned by 40% because of the change in the Mie‐exciton coupling. Simultaneously, a doubled photoluminescence intensity enhancement with a 0.014 eV redshift of excitonic energy is observed, owing to the cooperation of the electromechanics and electrostatic doping. The findings suggest a new approach to build nanoscale optoelectronic devices and display units.

Nanoparticle Stressor-Induced Single-photon Sources in Monolayer WS 2 Emitting into a Narrowband Visible Spectral Range

Nanoparticle Stressor-Induced Single-photon Sources in Monolayer WS$_2$ Emitting into a Narrowband Visible Spectral Range

Enhancement of the Monolayer Tungsten Disulfide Exciton Photoluminescence with a Two-Dimensional Material/Air/Gallium Phosphide In-Plane Microcavity.

Strain-tunable Single Photon Sources in WSe2 Monolayers

Ultrathin WS2‐on‐Glass Photonic Crystal for Self‐Resonant Exciton‐Polaritonics

High-Density, Localized Quantum Emitters in Strained 2D Semiconductors

Irradiation of Nanostrained Monolayer WSe$_2$ for Site-Controlled Single-Photon Emission up to 150 K

Nanoscale optical imaging of multi-junction MoS2-WS2 lateral heterostructure

Photoluminescence of Monolayer WSe2 Enhanced by the Exciton Funnel Effect and the Interfacial Carrier Tunneling Effect when Integrated with 3D Si Wrinkled Structures

Proximity-induced chiral quantum light generation in strain-engineered WSe 2 /NiPS 3 heterostructures

Nanoscale modification of WS$_2$ trion emission by its local electromagnetic environment

Ultrathin quantum light source enabled by a nonlinear van der Waals crystal with vanishing interlayer-electronic-coupling

Dynamic strain modulation of a nanowire quantum dot compatible with a thin-film lithium niobate photonic platform

Interfacially Bound Exciton State in a Hybrid Structure of Monolayer WS2 and InGaN Quantum Dots

Interfacial bound exciton state in a hybrid structure of monolayer WS2 and InGaN quantum dots

Temperature dependent temporal coherence of metallic-nanoparticle-induced single-photon emitters in a WSe$_{2}$ monolayer

Widely tunable solid-state source of single-photons matching an atomic transition

Tunable Resonance Coupling in Single Si Nanoparticle-Monolayer WS2 Structures

Enhancing Single Photon Emission Purity via Design of van der Waals Heterostructures

Directional Light Emission from WS2 Monolayer Driven by Self-Hybridized Van Der Waals Nanoresonator

Individual Si Nanospheres Wrapped in a Suspended Monolayer WS2 for Electromechanically Controlled Mie‐Type Nanopixels