Enhancement of magnetoelectric coupling in laminate composites of textured Fe–Ga thin sheet and PZT

Jiande Liu,Zhenghua He,Chengdong Mi,Yuhui Sha,Xiaofei Zhu,Hongbo Hao,Lijia Chen,Liang Zuo
DOI: https://doi.org/10.1063/9.0000683
IF: 1.697
2024-01-01
AIP Advances
Abstract:Magneto-mechano-electric (MME) generators consisting of piezoelectric and magnetostrictive materials can convert the stray magnetic noise to useful electric energy for the wireless sensor networks utilizing the magnetoelectric coupling effect and magnetic interactions. In this paper, a scalable engineering approach was proposed to fabricate the laminate MME generator composed of a PZT/Fe–Ga/PZT sandwich structure. The Goss-oriented Fe81Ga19 thin sheet with a large magnetostriction of 244 ppm was produced by a simple and low-cost approach, and the commercial polycrystalline piezoelectric ceramic products (PZT-5H) were used as the PZT layers. The effect of grain orientation, device structure, magnetic field amplitude, and resonance frequency on the electrical output of the PZT/Fe–Ga/PZT MME generator was investigated. The electrical output of the MME generator containing the Goss-oriented Fe81Ga19 thin sheet reached an AC voltage of 4.58 V and the ME coefficient of 76.33 V/cm·Oe under a low excitation magnetic field of 26 Oe at a low resonance frequency of 26 Hz. The MME generator with a Goss-oriented Fe–Ga layer shows 4.7 times higher output voltage and ME coupling coefficient than that with the no-oriented polycrystalline Fe–Ga layer, but only 81% of the latter’s resonance frequency. This is related to the significant increase in magnetostriction due to the texture transition after secondary recrystallization annealing at the temperature of 950 °C. This paper provides a very promising solution to meet the self-power supply needs of the Internet of Things utilizing low-value and low-frequency magnetic fields.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
What problem does this paper attempt to address?
This paper attempts to solve the problem of how to use low - frequency and low - intensity magnetic fields to provide self - power for Internet of Things (IoT) devices. Specifically, the paper proposes a scalable engineering method to fabricate a magnetoelectric - coupled generator (MME generator) composed of a PZT/Fe - Ga/PZT sandwich structure. By optimizing the texture and magnetostrictive properties of the Fe - Ga sheet, the electrical output performance of the MME generator is improved, thereby achieving more efficient energy conversion. ### Main research contents: 1. **Material preparation**: - A Goss - oriented Fe81Ga19 sheet with high magnetostrictive properties was prepared, and its magnetostrictive coefficient reached 244 ppm. - A commercial polycrystalline piezoelectric ceramic product (PZT - 5H) was used as the piezoelectric layer. 2. **Performance testing**: - The effects of grain orientation, device structure, magnetic field amplitude, and resonance frequency on the electrical output of the PZT/Fe - Ga/PZT MME generator were studied. - The test results showed that under a low - excitation magnetic field (26 Oe) and a low resonance frequency (26 Hz), the alternating - voltage of the MME generator reached 4.58 V, and the magnetoelectric coupling coefficient reached 76.33 V/cm·Oe. 3. **Comparative analysis**: - Comparing the Goss - oriented Fe - Ga layer with the non - oriented polycrystalline Fe - Ga layer, it was found that the output voltage and magnetoelectric coupling coefficient of the Goss - oriented Fe - Ga layer were increased by 4.7 times respectively, but the resonance frequency was only 81% of that of the non - oriented polycrystalline Fe - Ga layer. - This performance improvement is attributed to the significant improvement of magnetostrictive properties after secondary recrystallization annealing. ### Conclusion: This research proposes a simple, efficient, and low - cost method to fabricate MME generators, which can use low - frequency and low - intensity magnetic fields to provide self - power for IoT devices and has broad application prospects.