Abstract:Nonlinear silicon photonics has been an immense research subject in the past several years with promising prospects of delivering chip scale signal modulation, shaping and characterization tools. In particular, broadband parametric process has been considered for applications ranging from wideband light amplifiers to signal characterization and signal shaping tools. Although underlying nonlinear effect, Kerr phenomena, in silicon has generated promising result of wavelength conversion, the success of these devices have been challenged by the presence of nonlinear losses such as two photon absorption and the two photon generated free carrier absorption. Experimental demonstrations were limited to conversion efficiencies below -10dB. Here, we present the prospect of ultra wide discrete band conversion schemes and the prospect of parametric process at mid-infrared wavelengths where nonlinear losses are not present. In particular, we explore the parametric wavelength conversion scheme at mid-wave infrared wavelength (2 mu m similar to 6 mu m) by four-wave-fixing process in silicon waveguides with new cladding materials, such as sapphire, that can provide transparency up to 6 mu m and facilitate phase matching condition for discrete wavelength bands as far as 60THz away from each other. Design criteria include the optimization of mode overlap integrals and dispersion engineering for an ultra-wide band signals. The particular results of wavelength conversion between 2 mu m bands and 5 mu m bands, and between 1.8 mu m bands and >4 mu m bands will be presented. Prospects of frequency band conversion in generation of new infrared signals and low noise, room temperature detection of mid-infrared signals will also be discussed.

Over 3.8 W, 3.4?μm picosecond mid-infrared parametric conversion based on a simplified one-to-many scheme

Over 3.8 W, 3.4 µm picosecond mid-infrared parametric conversion based on a simplified one-to-many scheme

A Compact Upconversion Single-Photon Imager for Full-Range and Accurate 3-D Imaging

Color Router-based Long-wave Infrared Multispectral Imaging

Silicon-based Ultra-Wide Discrete Band Conversion

Amplification Assisted Optical Parametric Oscillator in the Mid-Infrared Region

Quasi Phase Matching in Soi and Sos Based Parametric Wavelength Converters

High-energy Single-Longitudinal-mode Mid-Infrared Optical Parametric Amplifier Seeded with Sheet Optical Parametric Oscillator

Efficient parametric conversion for high power mid-infrared laser output

Efficiency-enhanced optical parametric down conversion for mid-infrared generation on a tandem periodically poled MgO-doped stoichiometric lithium tantalate chip.

Mid-infrared single-photon upconversion spectroscopy enabled by nonlocal wavelength-to-time mapping

Efficiency-enhanced Picosecond Mid-Infrared Optical Parametric Downconversion Based on a Cascaded Optical Superlattice

Midinfrared up-conversion imaging under different illumination conditions

Simultaneous All‐optical Amplification, Inversion and Format Conversion Based on Self‐induced Nonlinear Effects in a Semiconductor Optical Amplifier

An InP-Based Mid-Wave Infrared Up-Converter Utilizing Cascade Carrier Transportation

Free-space transmission of picosecond-level, high-speed optical pulse streams in the 3?μm band

Mid-Infrared Upconversion Imaging Under Different Illumination Conditions

Free-space transmission of picosecond-level, high-speed optical pulse streams in the 3 µm band

Mid-infrared optical parametric amplifier using silicon nanophotonic waveguides

A High-Power Continuous-Wave Mid-Infrared Optical Parametric Oscillator Module

High-efficiency mid-infrared CW-seeded optical parametric generation in PPLN waveguide