Growth, Structure, Electrical Transport and Thermal Stability of New Allotropic MoC 4 Crystals

Lin Cao,Hao-Min Lu,Shuang Han,Jiang-He Feng,Yang-Yang Lv,Jian Zhou,Shu-Hua Yao,Y. B. Chen,Yan-Feng Chen
DOI: https://doi.org/10.1021/acs.cgd.1c00320
2021-07-29
Abstract:Carbide materials are interesting and useful functional materials, such as for thermal barrier coatings and wide-band-gap semiconductors. In this paper, a novel molybdenum carbide material, MoC4 crystals, was obtained using the chemical vapor transport (CVT) method. MoC4 crystals have a monoclinic structure, and their space group is P21/n (No. 14) (a = 5.5347(14) Å, b = 4.8498(7) Å, c = 5.6013(14) Å, and V = 130.91(6) Å3). The electrical properties of MoC4 crystal demonstrate the metallic behavior that the Bloch–Grüneisen model can well describe. A Hall measurement shows that MoC4 has a high hole carrier concentration of up to 0.6 × 1023 cm–3 on average and carrier mobility of μ = 76–125 cm2 V–1 s–1. In addition, MoC4 was found to be thermodynamically stable above 1500 °C, and so it may be used as high-temperature conductors or electrodes.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.cgd.1c00320.Crystallographic data and structure refinement details MoC4, atomic coordinates and equivalent isotropic displacement parameters, and selected bond lengths and angles for MoC4 and anisotropic displacement parameters for q (PDF)This article has not yet been cited by other publications.
chemistry, multidisciplinary,materials science,crystallography
What problem does this paper attempt to address?