Abstract:Semiconductor-sensitized solar cell (SSSC) represents a new generation of device aiming to achieve easy fabrication and cost-effective performance. However, the power of the semiconductor sensitizers has not been fully demonstrated in SSSC, making it actually overshadowed by dye-sensitized solar cell (DSSC). At least part of the problem is related to the inefficient charge separation and severe recombination with the current technologies, which calls on rethinking about how to better engineer the semiconductor sensitizer structure in order to enhance the power conversion efficiency (PCE). Herein we report on using for the first time a quasi-quantum well (QW) structure (ZnSe/CdSe/ZnSe) as the sensitizer, which is quasi-epitaxially deposited on ZnO tetrapods. Such a novel photoanode architecture has attained 6.20% PCE, among the highest reported to date for this type of SSSCs. Impedance spectra have revealed that the ZnSe/CdSe/ZnSe QW structure has a transport resistance only a quarter that of, but a recombination resistance twice that of the ZnSe/CdSe heterojunction (HJ) structure, yielding much longer electron diffusion length, consistent with the resulting higher photovoltage, photocurrent, and fill factor. Time-resolved photoluminescence spectroscopy indicates dramatically reduced electron transfer from ZnO to the QW sensitizer, a feature which is conducive to charge separation and collection. This study together with the impedance spectra and intensity modulated photocurrent spectroscopies supports a core/shell two-channel transport mechanism in this type of solar cells and further suggests that the electron transport along sensitizer can be considerably accelerated by the QW structure employed.

BaSnO3-SnO2 heterojunction mesoporous photoanode for quantum dot-sensitized solar cells

CdSe Quantum Dots Sensitized Mesoporous TiO2Solar Cells with CuSCN As Solid-State Electrolyte

FeS2-sensitized ZnO/ZnS Nanorod Arrays for the Photoanodes of Quantum-Dot-sensitized Solar Cells

Titanium Dioxide/zinc Indium Sulfide Hetero-Junction: an Efficient Photoanode for the Dye-Sensitized Solar Cell

Photoanodes with mesoporous TiO 2 beads and nanoparticles for enhanced performance of CdS/CdSe quantum dot co-sensitized solar cells

High-efficiency Dye-Sensitized Solar Cells Based on the Composite Photoanodes of SnO2 Nanoparticles/zno Nanotetrapods.

Energetic Alignment in Nontoxic Sns Quantum Dot-Sensitized Solar Cell Employing Spiro-Ometad As the Solid-State Electrolyte

SnS Quantum Dot-CsPbBr<sub>3</sub>Perovskite Bulk Heterojunction for Enhanced Photoelectrical Conversion Efficiency

Ti3C2 MXene quantum dots decorated mesoporous TiO2/Nb2O5 functional photoanode for dye-sensitized solar cells

Zn-doped CdSSe composite quantum dots synthesized by a two-step hydrothermal ion exchange in sensitized solar cells

A Quasi-Quantum Well Sensitized Solar Cell with Accelerated Charge Separation and Collection.

Interface engineered cascade-type electronic structure of 2D/0D/2D CdS-CdCO3/SnO2 quantum dots/g-C3N4 nanocomposite for boosting solar-driven photocatalysis

Interfacial Heterojunction Enables High Efficient PbS Quantum Dot Solar Cells

A novel 2D/2D MoSe2/SnSe heterojunction photocatalyst with large carrier transmission channel shows excellent photoelectrochemical performance

Dissymmetric interface design of SnO2/TiO2 side-by-side bi-component nanofibers as photoanodes for dye sensitized solar cells: Facilitated electron transport and enhanced carrier separation

High-Throughput Screening and Optimization of Binary Quantum Dots Cosensitized Solar Cell

Novel 0D/2D ZnSe/SnSe heterojunction photocatalysts exhibiting enhanced photocatalytic and photoelectrochemical activities

Highly Efficient Solid-State Solar Cells Based on Composite CdS-ZnS Quantum Dots

Unique Zn-Doped Sno2 Nano-Echinus with Excellent Electron Transport and Light Harvesting Properties As Photoanode Materials for High Performance Dye-Sensitized Solar Cell

Preparation and Photoelectrochemical Properties of CdS, CdSe Co-sensitized ZnO Film Electrode

Modulating the 0D/2D Interface of Hybrid Semiconductors for Enhanced Photoelectrochemical Performances