Robust Light Detection from Ultraviolet to Near‐Infrared with ZnGa2O4/p‐Si Heterojunction Photodiode and Its Application for Optoelectronic Physically Unclonable Functions (Adv. Electron. Mater. 11/2024)

Wangmyung Choi,Seungme Kang,Yeong Jae Kim,Youngwoo Yoo,Wonjun Shin,Yeongkwon Kim,Young‐Joon Kim,Byung Chul Jang,Jaehyun Hur,Hocheon Yoo

DOI: https://doi.org/10.1002/aelm.202470035

IF: 6.2

2024-11-11

Advanced Electronic Materials

Abstract:Robust Light Detection with Broadband ZnGa2O4/p‐Si Heterojunction Photodiode for Physically Unclonable Functions In article number 2400649, Hocheon Yoo and co‐workers demonstrate broadband detection performance by applying a UV‐responsive ZnGa2O4 film with a low refractive index on p‐Si. The device exhibited stability in various environments, benefiting from the chemical robustness of ZnGa2O4. By introducing different self‐assembled monolayers to induce irregular doping, the research team enabled multi‐key generation through a combination of voltage and wavelength.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology